Threshold Voltage Variations of 3D V-NAND Flash Memory Devices Due to Different Positions and Angles of the Single Grain Boundary

Lee, Jun Gyu; Yoo, Kyung Ho; Kim, Tae Whan

doi:10.1166/jnn.2017.14721

j nanosci nanotechnol

2017

DOI: 10.1166/jnn.2017.14721

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Threshold Voltage Variations of 3D V-NAND Flash Memory Devices Due to Different Positions and Angles of the Single Grain Boundary

Jun Gyu Lee

Kyung Ho Yoo²,

Tae Whan Kim

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Threshold Voltage Variations of 3D V-NAND Flash Memory Devices Due to Different Positions and Angles of the Single Grain Boundary

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