2020 Third International Workshop on Mobile Terahertz Systems (IWMTS) 2020
DOI: 10.1109/iwmts49292.2020.9166424
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THz Arrays in CMOS

Abstract: In this paper, two CMOS arrays above 0.5 THz are introduced. By coupling numerous radiator elements together, state-of-the-art radiated power is achieved. At 0.59 THz, a coherent radiator array is designed in 40 nm CMOS. Combining 36 coherent radiators on 0.68 mm 2 , it achieves 1 mW radiated power, 24.1 dBm EIRP and 0.8 ‰ DC-to-THz efficiency. Further, a 0.67 THz radiator array using a novel oscillator topology is introduced. The oscillator core benefits from a harmonic tank and a filtering feedback network t… Show more

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Cited by 2 publications
(2 citation statements)
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“…Its operating frequency is mostly limited to 0.5 THz [244], [245], which can provide solutions in the lower frequency band of the THz spectrum. Due to the relatively mature integration capabilities of siliconbased, many small-scale phased arrays based on various siliconbased processes have been reported [246]- [253]. An example is given in [254], which shows a 4 × 4 URPA using 130 nm SiGe bipolar-CMOS (BiCMOS) technology at 320 GHz.…”
Section: A Electronic and Photonic Approachesmentioning
confidence: 99%
“…Its operating frequency is mostly limited to 0.5 THz [244], [245], which can provide solutions in the lower frequency band of the THz spectrum. Due to the relatively mature integration capabilities of siliconbased, many small-scale phased arrays based on various siliconbased processes have been reported [246]- [253]. An example is given in [254], which shows a 4 × 4 URPA using 130 nm SiGe bipolar-CMOS (BiCMOS) technology at 320 GHz.…”
Section: A Electronic and Photonic Approachesmentioning
confidence: 99%
“…Its operating frequency is mostly limited to 0.5 THz [208], [209], which can provide solutions in the lower frequency band of the THz spectrum. Due to the relatively mature integration capabilities of siliconbased, many small-scale phased arrays based on various siliconbased processes have been reported [210]- [217]. An example is given in [218], which shows a 4 × 4 URPA using 130 nm SiGe BiCMOS technology at 320 GHz.…”
Section: A Electronic and Photonic Approachesmentioning
confidence: 99%