Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC:H interface layer

Triendl, F.; Pfusterschmied, Georg; Berger, Claudio; Schwarz, Sabine; Artner, Werner; Schmid, Ulrich

doi:10.1016/j.tsf.2021.138539

Cited by 11 publications

(3 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In another case, the insertion of an ultrathin amorphous-hydrogenated SiC layer (a-SiC:H) in the Ti/4H-SiC contact has been assessed with promising results (see schematic view in Figure 12 a) [ 87 ]. The amorphous layer, with a thickness between 0.7 and 4 nm, was grown on the 4H-SiC surface by means of plasma-enhanced chemical vapor deposition prior to Ti deposition.…”

Section: Unconventional Approaches For the Control Of 4h-sic Schottky Interfacesmentioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

View full text Add to dashboard Cite

Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.

show abstract

Section: Unconventional Approaches For the Control Of 4h-sic Schottky Interfacesmentioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

View full text Add to dashboard Cite

show abstract

“…One of the most promising applications of SiC is the color centers generated by defects in the crystal, which are excellent candidates for memory and quantum communication applications. − Additionally, SiC has more than 250 crystalline polytypes that have a large number of applications, including temperature sensors, nanoelectromechanical systems, pressure sensors, accelerometers, and gas sensors . However, not only these different crystalline polytypes of SiC are useful, attractive applications have also been reported for amorphous SiC (a-SiC), such as the detection of Salmonella, Schottky barrier modulation in Schottky diodes, or the manufacture of photocathodes for solar water splitting …”

Section: Introductionmentioning

confidence: 99%

Experimental Study of the Influence of CH₄ and H₂ on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

et al. 2022

View full text Add to dashboard Cite

Silicon carbide (SiC) has become an extraordinary photonic material. Achieving reproducible self-formation of silicon quantum dots (SiQDs) within SiC matrices could be beneficial for producing electroluminescent devices operating at high power, high temperatures, or high voltages. In this work, we use a remote plasma-enhanced chemical vapor deposition system to grow SiC thin films. We identified that a particular combination of 20 sccm of CH 4 and a range of 58–100 sccm of H 2 mass flow with 600 °C annealing allows the abundant and reproducible self-formation of SiQDs within the SiC films. These SiQDs dramatically increase the photoluminescence-integrated intensity of our SiC films. The photoluminescence of our SiQDs shows a normal distribution with positive skewness and well-defined intensity maxima in blue regions of the electromagnetic spectrum (439–465 nm) and is clearly perceptible to the naked eye.

show abstract

“…But, the main drawback of ion bombardment is that amorphous regions with high defect densities are generated which results in very strong Fermi level pinning (FLP) [14,15]. This approach of artificial FLP can be used to adjust the SBH if the unpinned junction is very high or low, or if the Fermi level is pinned close to the band-edges [17,18]. The Si/4H-SiC heterojunction is a rather novel combination that offers good rectifying characteristics [19].…”

Section: Introductionmentioning

confidence: 99%

Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes

Triendl

Pfusterschmied

Schwarz

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Si/4H-SiC heterojunction diodes (HJDs) are fabricated by applying Ar+ inverse sputter etching (ISE) of the 4H-SiC substrate prior to Si deposition. A subsequent annealing step was used to crystallize the sputter deposited amorphous Si. Numerical simulations and experiments were conducted to investigate the amorphization depth and etch rate of low energy Ar+ ions on the Si-face of 4H-SiC. Electrical characterization of the HJDs showed a strong influence of the ISE treatment in both n and p-type Si contacts compared to untreated diodes. The ISE power, as well as the ISE time can be tailored to adjust the Schottky barrier height (SBH) in a certain range, by simultaneously improving the device ideality for most ISE parameters compared to diodes without any ISE treatment. In addition, the homogeneity of the SBHs is improved, resulting in less variation over temperature and between different samples. The formation of a smooth Si–SiC transition region instead of a sharp interface is found after both ISE treatment and thermal annealing.

show abstract

Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC:H interface layer

Cited by 11 publications

References 45 publications

Materials and Processes for Schottky Contacts on Silicon Carbide

Materials and Processes for Schottky Contacts on Silicon Carbide

Experimental Study of the Influence of CH₄ and H₂ on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes

Contact Info

Product

Resources

About

Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC:H interface layer

Cited by 11 publications

References 45 publications

Materials and Processes for Schottky Contacts on Silicon Carbide

Materials and Processes for Schottky Contacts on Silicon Carbide

Experimental Study of the Influence of CH4 and H2 on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes

Contact Info

Product

Resources

About

Experimental Study of the Influence of CH₄ and H₂ on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition