Ti and Mn co-doped semi-insulating InP particle detectors operating at room temperature

Gorodynskyy, V.; Žďánský, K.; Pekárek, L.; Malina, V.; Vacková, S.

doi:10.1016/j.nima.2005.09.032

Cited by 15 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The InP has a distance of 0.254 nm as nearest neighbour and direct band gap energy of 1.344 eV at 300 K [36]. It also has one of the longest-lived optical phonons of any compound with the zinc-blend crystal structure [37]. It was used with indium gallium arsenide to make a record-breaking pseudo-morphic hetero-junction bipolar transistor that could operate at 604 GHz [38].…”

Section: Introductionmentioning

confidence: 99%

First-Principle Study of Electronic and Half-Metallic Ferromagnetic Properties of Vanadium (V)-Doped Cubic BP and InP

Boutaleb¹,

Doumi²,

Mokaddem³

et al. 2017

J Supercond Nov Magn

View full text Add to dashboard Cite

In this study, we use the first-principle calculations of density functional theory with gradient generalized approximation of Wu-Cohen to investigate the doping effect of vanadium impurity on structural, electronic and magnetic properties of In 1−x V x P and B 1−x V x P alloys at various concentrations x = 0.0625, 0.125 and 0.25. Owing to the metallic nature of majority spin and semiconducting minority spin, the In 1−x V x P compounds exhibit a halfmetallic character with total magnetic moments of 2 μ B , while the B 1−x V x P has metallic nature for all concentrations. The results of exchange parameters revealed that exchange coupling between vanadium atoms and the conduction band is ferromagnetic, confirming the magnetic feature of In 1−x V x P and B 1−x V x P. From our findings, we have predicted that the In 1−x V x P alloys seem to be potential materials for spintronics.

show abstract

Section: Introductionmentioning

confidence: 99%

First-Principle Study of Electronic and Half-Metallic Ferromagnetic Properties of Vanadium (V)-Doped Cubic BP and InP

Boutaleb¹,

Doumi²,

Mokaddem³

et al. 2017

J Supercond Nov Magn

View full text Add to dashboard Cite

show abstract

“…Therefore SI InP can be prepared also by co-doping with Ti or Cr and suitable acceptors such as Cd, Hg, Zn or Be in sufficient concentration to compensate fully for residual donor impurities [15,16]. The first prototype particle detectors based on SI InP co-doped with Ti+Mn operating at RT with 60% CCE [17] have been fabricated in our laboratory. Co-doping with Ti+Mn is more suitable than doping with Fe due to the smaller carrier capture-rate of Ti and the gettering effect of Mn, yielding InP of higher purity.…”

Section: Introductionmentioning

confidence: 99%