In this study, a liquid metal gas injection method was
employed
to prepare two-dimensional (2D) chromium oxide (Cr2O3) and chromium nitride (CrN). The process, conducted at room
temperature and atmospheric pressure, eliminates the need for high
temperature and high pressure conditions typically required by conventional
methods, thereby reducing energy consumption. The liquid metal used
is nontoxic and can be recycled, making the entire experimental procedure
environmentally friendly. The resulting amorphous chromium-based semiconductors
were transformed to crystalline Cr2O3 and CrN
through annealing and nitridation processes. The fabrication and characterization
of photodetectors revealed the unique negative photoresponse behavior
of Cr2O3 and CrN, with strong correlations to
their metallic resistance characteristics confirmed through temperature-resistance
measurements. The field-effect transistors demonstrated the p-type
semiconductor properties of Cr2O3 and the n-type
semiconductor properties of CrN with energy gaps of 3.3 and 0.6 eV,
respectively. This research not only illustrates the application of
the liquid metal gas injection method for the preparation of two-dimensional
materials but also reveals the correlation between negative photoresponse
and metallic resistance, providing valuable insights for the future
development of photoresponse and contributing to the academic research
on 2D materials and their synthesis methods.