1995
DOI: 10.1016/0167-577x(94)00246-0
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Ti3SiC-based materials prepared by HIP-SHS techniques

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Cited by 206 publications
(112 citation statements)
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“…Table 2 lists recent work available on the synthesis of Ti 3 SiC 2 from Ti/Si/C powders with different molar ratios by using different methods along with the present results. Lis et al 5 tried to utilize the SHS-HIP, HIP and gas-pressure combustion synthesis (GPCS) techniques to synthesize Ti 3 SiC 2 from Ti/Si/C powder.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Table 2 lists recent work available on the synthesis of Ti 3 SiC 2 from Ti/Si/C powders with different molar ratios by using different methods along with the present results. Lis et al 5 tried to utilize the SHS-HIP, HIP and gas-pressure combustion synthesis (GPCS) techniques to synthesize Ti 3 SiC 2 from Ti/Si/C powder.…”
Section: Discussionmentioning
confidence: 99%
“…1 In recent decades, to synthesize Ti 3 SiC 2 samples, various processes including: (1) chemical vapor deposition; 2 (2) arc-melting method; 3 (3) Hot-isolated-pressing (HIP) or spark plasma sintering (SHS) method; 4À9 and (4) reactive sintering method; 10À13 were employed or developed. In the earlier sintering methods, most investigators preferred to fabricate this material by using the elemental powders of Ti/Si/C with different molar ratios, such as Lis et al, 5,6 Li et al, 7,8 Gao et al , 9 Racault et al, 10 Radhakrishnan et al, 11 Zhou and Sun. 12,13 However, it is noted that their sintering processes were often performed at relatively high temperature (more than 1400 C) for a long time.…”
Section: Introductionmentioning
confidence: 99%
“…1) This relatively new material shows high thermal and electric conductivities, a high thermal stability, good corrosion resistance, and excellent machinability, and is therefore expected to be useful as an engineering material. Several studies [2][3][4][5] have been made on the synthesis of Ti 3 SiC 2 , and it has been reported [6][7][8][9][10] that the pulse discharge sintering (PDS) process is effective in the synthesis of high-purity Ti 3 SiC 2 . It has been also reported 11) that the structure of synthesized Ti 3 SiC 2 is sensitive to the compounding ratio of the raw material powder mixture of Ti, Si, and TiC.…”
Section: Introductionmentioning
confidence: 99%
“…Literatür verilerine bakıldığında 700 0 C ye kadar mükemmel oksidasyon direnci [16] ve 2300 0 C ye kadar faz kararlılığını korumaktadır [11] Şekil 13. Sıcaklığa bağlı termal iletkenlik özellikleri [11].…”
Section: Max Fazi Alaşimlarin Faz Kararliliğiunclassified