Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C

Abstract

Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed.<p>Funding Agencies|EPSRC|EP/G033471/1EP/F056117/1|ERC|227754|</p

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

“…It is worth noting that Ti 5 Si 3 was identified as a transient phase only existing in a narrow range of temperatures from 412 to 434 • C [18]. In another work, Vishnyakov et al identified Ti 5 Si 3 (C x ) with dissolved carbon in Ti-Si-C multilayers deposited by magnetron sputtering at 650 • C [35]. The first mechanism, which consists of the formation an amorphous layer at the Ti-Si interface before Ti silicides crystallize, cannot be ruled out.…”

Synthesis of Ti3SiC2 Through Pressureless Sintering

“…Ternary compounds, such as Cr2AlC [1], Ti3SiC2 [2][3][4], and Ti3AlC2 [5,6], have attracted considerable interest, primarily because of their unique properties combining many merits of both metals and ceramics. Like metals, they show high thermal and electrical conductivity, and are easy to machine, resistant to thermal shock, and tolerant to damage.…”

Single-step synthesis process of Ti 3 SiC 2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

“…This phase can accommodate considerable amounts of C and thus is usually referred to as 69 Ti 5 Si 3 C x . 23,24 It has hexagonal crystal structure with P6 3 /mcm space group in which C atoms sit at 2b 70 positions. For the sake of brevity, we will write Ti 5 Si 3 here.…”