TiB2-coated cathodes for aluminum smelting cells

Becker, Aaron J.; Blanks, John H.

doi:10.1016/0040-6090(84)90009-9

Cited by 23 publications

(5 citation statements)

References 3 publications

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“…4 -6 Chemical vapor deposition ͑CVD͒ and PVD methods to deposit films of group 4 transition metal diborides have been previously described. [7][8][9][10] In conventional CVD of ZrB 2 films, the precursors ZrCl 4 and BCl 3 are reduced with H 2 . This approach yields high-quality films but requires a substrate temperature above 600°C, which is far too high for ULSI processing.…”

Section: Introductionmentioning

confidence: 99%

Remote-plasma chemical vapor deposition of conformal ZrB2 films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics

Sung

Goedde

Girolami

et al. 2002

Journal of Applied Physics

103

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High-quality ZrB 2 thin films have been deposited at substrate temperatures as low as 300°C by a new method: remote hydrogen-plasma chemical vapor deposition from the single-source precursor Zr(BH 4) 4. Carrying out the deposition in the presence of atomic hydrogen generates films with properties that are far superior to those deposited by purely thermal methods; the latter are boron-rich, oxidize readily in air, and adhere poorly to the substrates. In contrast, the films generated at a substrate temperature of 300°C in the presence of atomic H have a B/Zr ratio of 2, a resistivity of 40 ⍀ cm, an oxygen content of р4 at. %, and are fully conformal in deep vias. A 20 nm thick amorphous film of ZrB 2 on c-Si͑001͒ prevents Cu indiffusion after 30 min at 750°C. We propose that the beneficial effects of atomic hydrogen can be attributed to promoting the desorption of diborane from the growth surface.

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Section: Introductionmentioning

confidence: 99%

Remote-plasma chemical vapor deposition of conformal ZrB2 films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics

Sung

Goedde

Girolami

et al. 2002

Journal of Applied Physics

103

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“…Titanium diboride (TiB2) is a promising material as a cathode of electrolysis in fused salt [1], or as various structural ceramics [2], because of its high electrical conductivity [3] and corrosion/erosion resistances [4][5][6]. The TiB 2 bodies are usually fabricated via sintering techniques such as hot-press processing; however, the properties of the sintered TiB z bodies are often inferior due to the existence of pores or impurities such as additives or free B [7].…”

Section: Introductionmentioning

confidence: 99%

Preferred orientation of TiB2 plates prepared by CVD of the TiCl4 + B2H6 system

1991

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Titanium diboride (TiB2) plates (about 1 mm maximum thickness) were prepared by chemical vapour deposition (CVD) using a TiCI 4, B2H o and H= system at deposition temperatures, Tae p of 1323-1773 K. The B/Ti atomic ratio in the deposits was 2, and the composition is strictly stoichiometric. Chlorine was not detected. The measured lattice parameters were a-0.3029 nm and c = 0.3229 nm. Density is in close agreement with the theoretical value (4.50 g cm-3). Preferred orientation of the CVD TiB 2 plates varies mainly with total gas pressures, Ptot. At Ptot = 4 kPa the (1 00) plane and at Ptot = 40 kPa the (1 1 0) plane is preferably oriented parallel to the substrates. The effect of Ptot on the preferred orientation is discussed thermodynamically, and explained by supersaturation in the gas phase.

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“…However, the absorption is considerably less than what the pitch in the carbon cathode can absorb. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Therefore, an immediate benefit in sodium loss is generally noted [27] during the early stages of cell operation. The formation of the sodium aluminate and the ␤-alumina have been verified from the X-ray analysis of the samples after the sodium resistance tests.…”

Section: A Sodium Resistance Mechanismsmentioning

confidence: 99%

“…These coating techniques include electrodeposition, plasma spraying, glazing with a powder layer, or chemical vapor deposition. [6][7][8][9][10][11][12][13][14][15] Most coating techniques, however, are generally not suitable for utilization on an industrial scale. During the early stages of electrolysis, sodium is deposited on the cathode.…”

Section: Introductionmentioning

confidence: 99%

A porous titanium diboride composite cathode coating for Hall-Héroult cells: Part I. Thin coatings

Sekhar

Liu

Nora³

1998

Metall Mater Trans B

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The mechanical, electrical, and electrochemical properties of a porous cathode coating, made by compositing titanium diboride powder and colloidal alumina, are described. Such coatings are expected to be used on the carbon cathodes employed in Hall-Héroult cells. The properties of the composite coating are compared with uncoated carbon cathode reference samples. The bonding properties of the coating with the carbon are also examined. The sodium trapping mechanisms of the coating are explored in this article.* *An earlier version of this article appeared in TMS Light Metals 1996 Proc., edited by W. Hale. This previous article is cited herein in Ref. 28.

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TiB2-coated cathodes for aluminum smelting cells

Cited by 23 publications

References 3 publications

Remote-plasma chemical vapor deposition of conformal ZrB2 films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics

Remote-plasma chemical vapor deposition of conformal ZrB2 films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics

Preferred orientation of TiB2 plates prepared by CVD of the TiCl4 + B2H6 system

A porous titanium diboride composite cathode coating for Hall-Héroult cells: Part I. Thin coatings

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