2005
DOI: 10.1149/1.1938108
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TiCl[sub 4] as a Precursor in the TiN Deposition by ALD and PEALD

Abstract: This study explores TiN film deposition using the plasma enhanced atomic layer deposition (PEALD) technique, comparing the results of PEALD-TiN with the previous results of ALD-TiN and ALD-TiN with in situ reduction. Each of the studies used TiCl4 precursor as the titanium source. The ALD-TiN study used ammonia as the reducing agent. Nitrogen and hydrogen gases are not reactive in the ALD-TiN deposition, but they were successfully used in PEALD-TiN. This study shows that the concept of self-saturating reacti… Show more

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Cited by 74 publications
(49 citation statements)
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“…This means that it is possible to deposit films with equivalent material properties at lower substrate temperatures than for thermal ALD. 40,56,65,87,187,233,243,249,254,320 The reactivity delivered by the plasma species is not only provided by reactive plasma radicals but is also determined by the kinetic energy of the ions accelerated in the plasma sheath, the surfacerecombination energy of the ions and other species, and the energy flux caused by the plasma radiation.…”
Section: B Deposition At Reduced Substrate Temperaturesmentioning
confidence: 99%
“…This means that it is possible to deposit films with equivalent material properties at lower substrate temperatures than for thermal ALD. 40,56,65,87,187,233,243,249,254,320 The reactivity delivered by the plasma species is not only provided by reactive plasma radicals but is also determined by the kinetic energy of the ions accelerated in the plasma sheath, the surfacerecombination energy of the ions and other species, and the energy flux caused by the plasma radiation.…”
Section: B Deposition At Reduced Substrate Temperaturesmentioning
confidence: 99%
“…2,4 In addition, the plasmaassisted atomic layer deposition ͑PA-ALD͒ technique is believed to offer the same advantages as ALD as well as a larger freedom in materials and processes, improved material quality, and lower deposition temperature. [5][6][7] When reducing the film dimensions towards the nanometer scale, detailed insight into aspects such as finite size effects, film nucleation, and interface formation/modification becomes essential. [8][9][10][11] Therefore, successful application of ultrathin films in devices has to be accompanied by accurate metrology techniques to determine the properties of these thin films.…”
Section: Introductionmentioning
confidence: 99%
“…By using atomic layer deposition (ALD) [4][5][6], the film deposition is controlled at the atomic level, so the composition and thickness can be controlled precisely, resulting in a highly conformal deposition. Low temperature deposition is also possible with plasmaenhanced ALD (PEALD), using a remote plasma source to minimize plasma damage to the substrate or film [6].…”
Section: Introductionmentioning
confidence: 99%
“…Low temperature deposition is also possible with plasmaenhanced ALD (PEALD), using a remote plasma source to minimize plasma damage to the substrate or film [6]. The most commonly used precursor for ALD TiN is titanium tetrachloride (TiCl 4 ), together with ammonia (NH 3 ) [4][5][6].…”
Section: Introductionmentioning
confidence: 99%
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