This study explores TiN film deposition using the plasma enhanced atomic layer deposition (PEALD) technique, comparing the results of PEALD-TiN with the previous results of ALD-TiN and ALD-TiN with in situ reduction. Each of the studies used TiCl4 precursor as the titanium source. The ALD-TiN study used ammonia as the reducing agent. Nitrogen and hydrogen gases are not reactive in the ALD-TiN deposition, but they were successfully used in PEALD-TiN. This study shows that the concept of self-saturating reaction in ALD differs from PEALD. Although the growth rate saturates as a function of pulse lengths, the number of active surface sites and the film composition can be changed by the plasma pulsing parameters. In all deposition techniques the TiN films exhibit excellent film properties including low resistivity, low impurity concentration, and high-density films. PEALD provides significant advantages if the deposition temperature is lower than 350°C.

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The shift of device design to more complex structures with multiple crystallographic orientations has significantly complicated the incorporation of mobility enhancing stressors. The growth rate, composition and crystalline perfection of these stressors is dependent on the crystal orientation and is therefore of significant importance. For embedded source-drain and FinFET devices there are multiple crystallographic orientations present during the epitaxial stressor growth process. The compositional, growth rate and crystal quality dependence of Si1-xCx:P blanket epitaxial growth results on (001), (011), and (111) oriented Si substrates will be discussed and how they relate to the processing of FinFET device structures.

Silane (SiH 4 ) and dichlorosilane (DCS) are currently the precursors of choice for Silicon Vapor Phase Epitaxy at low temperatures (T < 1000 C). But device innovation is pushing down process thermal budgets to the extent that it becomes apparent that in the near future poor Si growth rates will become a roadblock for high volume manufacturing. Therefore, new precursors that produce high growth rates at low deposition temperatures (<650 C) are needed for advanced epitaxial applications, such as recessed sour-ce=drain stressors, Metal Oxide Semiconductor (MOS) channels and elevated source=drain structures. The primary objective of this study is to investigate the suitability of monochlorosilane (MCS) for Si epitaxy. It appears that MCS fulfills all the basic criteria, i.e. successful epitaxial growth and selective epitaxy, controllable C and P alloying with Si, for its qualification as a Si precursor in high volume manufacturing.