TID-Tolerant Inverter Designs for Radiation-Hardened Digital Systems

Kim, Sung Hoon; Lee, Juyun; Kwon, Inyong; Jeon, D.

doi:10.1016/j.nima.2018.10.151

Cited by 7 publications

(1 citation statement)

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“…In addition, RHBP requires an effort that can be supported only by large silicon foundries, and it also needs a dedicated and expensive technology process that does not have the same maturity as the standard one. RHBD addresses the requirements of harsh environments, and it ensures the design of complex integrated circuits (ICs) in commercial technology without increasing production costs [15,16]. In addition, a simulation-after-test that considers fault effects can provide more accurate results, and it can assure a good level of fault detection.…”

Section: Introductionmentioning

confidence: 99%

Diagnosis of Faults Induced by Radiation and Circuit-Level Design Mitigation Techniques: Experience from VCO and High-Speed Driver CMOS ICs Case Studies

Monda

Ciarpi²,

Saponara

2021

Electronics

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In this paper, we discuss the diagnosis of particle-induced failures in harsh environments such as space and high-energy physics. To address these effects, simulation-before-test and simulation-after-test can be the key points in choosing which radiation hardening by design (RHBD) techniques can be implemented to mitigate or prevent failures. Despite the fact that total ionising dose (TID) has slow but destructive effects overtime on silicon devices, single-event effect (SEE) impulsively disrupts the typical operation of a circuit with temporary or permanent effects. The recently released SpaceFibre protocol drives the current requirements for space applications, and the future upgrade of the LHC experiment scheduled by CERN will require a redesign of the electronic front-end to sustain a radiation level up to the 1 Grad TID level. The effects that these two environments have on two different architectures for high-radiation and high-frequency data transmission are reported, and the efficiency of the mitigation techniques implemented, based on simulations and measurement tests, in the commercial 65 nm technology, are exploited.

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Section: Introductionmentioning

confidence: 99%