2023
DOI: 10.1002/smll.202303864
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Tight Binding and Dual Encapsulation Enabled Stable Thick Silicon/Carbon Anode with Ultrahigh Volumetric Capacity for Lithium Storage

Abstract: Silicon (Si) is regarded as one of the most promising anode materials for high‐performance lithium‐ion batteries (LIBs). However, how to mitigate its poor intrinsic conductivity and the lithiation/delithiation‐induced large volume change and thus structural degradation of Si electrodes without compromising their energy density is critical for the practical application of Si in LIBs. Herein, an integration strategy is proposed for preparing a compact micron‐sized Si@G/CNF@NC composite with a tight binding and d… Show more

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Cited by 17 publications
(6 citation statements)
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“…The patterns of Si with three typical characteristic peaks at 2θ = 28.4°, 47.4°, and 56.1° are assigned to the (111), (220), and (311) planes of crystalline Si [Joint Committee on Powder Diffraction Standards (JCPDS) 27-1402], respectively. Of note, the diffraction peaks of TNS and Si appear simultaneously in the Si/G@TNS-60 sample, and their intensities are weakened obviously, implying the TNS recombination and coating on Si . The Raman spectra of both TNS and Si/G@TNS-60 (Figure c) display three diffraction peaks at 290, 412, and 603 cm –1 , assigned to Ti–C bond vibrations. , Besides, the peak at 510 cm –1 corresponds to the Si–Si bond vibration, observed in both Si and Si/G@TNS-60. , Furthermore, the characteristic peaks at 1325 and 1575 cm –1 in Si/G@TNS-60 are related to the D band (defects carbon) and the G band (sp 2 -bonded graphitic carbon) of the graphite carrier used to anchor Si. XPS was employed to provide a detailed characterization of the surface bonding and chemical state.…”
Section: Resultsmentioning
confidence: 93%
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“…The patterns of Si with three typical characteristic peaks at 2θ = 28.4°, 47.4°, and 56.1° are assigned to the (111), (220), and (311) planes of crystalline Si [Joint Committee on Powder Diffraction Standards (JCPDS) 27-1402], respectively. Of note, the diffraction peaks of TNS and Si appear simultaneously in the Si/G@TNS-60 sample, and their intensities are weakened obviously, implying the TNS recombination and coating on Si . The Raman spectra of both TNS and Si/G@TNS-60 (Figure c) display three diffraction peaks at 290, 412, and 603 cm –1 , assigned to Ti–C bond vibrations. , Besides, the peak at 510 cm –1 corresponds to the Si–Si bond vibration, observed in both Si and Si/G@TNS-60. , Furthermore, the characteristic peaks at 1325 and 1575 cm –1 in Si/G@TNS-60 are related to the D band (defects carbon) and the G band (sp 2 -bonded graphitic carbon) of the graphite carrier used to anchor Si. XPS was employed to provide a detailed characterization of the surface bonding and chemical state.…”
Section: Resultsmentioning
confidence: 93%
“…Of note, the diffraction peaks of TNS and Si appear simultaneously in the Si/G@TNS-60 sample, and their intensities are weakened obviously, implying the TNS recombination and coating on Si . The Raman spectra of both TNS and Si/G@TNS-60 (Figure c) display three diffraction peaks at 290, 412, and 603 cm –1 , assigned to Ti–C bond vibrations. , Besides, the peak at 510 cm –1 corresponds to the Si–Si bond vibration, observed in both Si and Si/G@TNS-60. , Furthermore, the characteristic peaks at 1325 and 1575 cm –1 in Si/G@TNS-60 are related to the D band (defects carbon) and the G band (sp 2 -bonded graphitic carbon) of the graphite carrier used to anchor Si. XPS was employed to provide a detailed characterization of the surface bonding and chemical state. The full spectrum in Figure S2 and Table S1 of the Supporting Information verifies the coexistence of C, Si, and Ti elements in Si/G@TNS-60.…”
Section: Resultsmentioning
confidence: 93%
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