Tight Binding Modeling of Heterojunction Band Offsets as a Function of Pressure and Composition

nl, H.

doi:10.1002/1521-3951(200101)223:1<195::aid-pssb195>3.0.co;2-j

Cited by 15 publications

(8 citation statements)

References 21 publications

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“…As known, band gaps, effective masses and band offsets are among the main carrier band parameters for the heterostructure design. In fact, the band gap energy determines the operation wavelength, the electron and hole mobilities are directly related to effective masses, while the band offsets control the carrier transport and performance of heterostructure-devices [26]. With this in mind, we have calculated all these parameters for Al x Ga 1−x As y Sb 1−y and Ga 1−x In x As y Sb 1−y as a function of related compositions.…”

Section: Methodsmentioning

confidence: 99%

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Jdidi¹,

Sfina²,

Nassrallah³

et al. 2011

Semicond. Sci. Technol.

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The authors report a two-color quantum well infrared photodetector at room temperature operating in the mid-and long-wavelength infrared detection. To this purpose, the band alignment is tailored and electronic properties are investigated for the proposed structure based on Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb. As accurate knowledge of band offsets is required in device modeling, we have proceeded to theoretical investigations of the band offsets for pseudo-morphically strained and lattice-matched Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb heterointerfaces in the whole range of alloy compositions 0 x, y 1. The carrier effective masses are deduced from the laws extracted from the k.p strain Hamiltonian laws. For the modeled heterostructure, the dark current of about 10 −1 A cm −2 at ambient temperature shows the high performance of this multi-color infrared photodetector around 5 and 12.5 μm wavelengths.

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Section: Methodsmentioning

confidence: 99%

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Jdidi¹,

Sfina²,

Nassrallah³

et al. 2011

Semicond. Sci. Technol.

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“…In this section we will give the theoretical details of band offset modelling in group III-nitride ternary/binary heterostructures based on recently developed sp 3 tight binding (ETB) model [3]. Considering only the first nearest neighbour interactions with overlapping due to non-orthogonality of sp 3 hybrids at adjacent sites, one obtains the following expression for the valence band energy at the centre of the Brillouin zone (k = 0) of binary semiconductors with diamond or zinc blende crystal structures [3]:…”

Section: Band Offsets In Iii-nitride Heterostructuresmentioning

confidence: 99%

“…is the additional contribution to the matrix elements between nearest neighbour bonds, and α p is the polarity of the hybrid bond [3].…”

Section: Band Offsets In Iii-nitride Heterostructuresmentioning

confidence: 99%

“…The composition effects on conduction band offset E ci (x), where i = , L, and X, can be obtained by combining Vegard's rule and Kane's three-level k • p analysis at the centre of the Brillouin zone (k = 0) of semiconductor band structure [2,3]:…”

Section: Band Offsets In Iii-nitride Heterostructuresmentioning

confidence: 99%

“…Therefore, quantitatively reliable and qualitatively precise determination of the effects of temperature, pressure, and strain on the electronic band structure is desirable for the design and performance predictions of novel heterostructures as highspeed, high-power, and low-noise heterojunction transistors (HBTs and MODFETs) operating at elevated temperatures and pressures. In this paper, the band offsets at AlGaN/GaN and InGaN/GaN heterointerfaces are determined using the extended sp 3 tight binding model [3] as a function of strain and composition.…”

Section: Introductionmentioning

confidence: 99%

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Band offsets in III-nitride heterostructures

Ünlü¹,

Asenov²

2002

J. Phys. D: Appl. Phys.

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We present a theoretical investigation of band offsets in GaN-based group III-nitride ternary/binary heterostructures with zinc blende structure. The band offsets in InGaN/GaN and AlGaN/GaN heterostructures were studied using the recently proposed extended sp3 tight binding model (Ünlü H 2001 Phys. Status Solidi. b 223 195). Simulations show a small valence band offset in AlGaN/GaN heterostructure and large valence band offset in the InGaN/GaN heterostructure. Furthermore, the tensile strain in AlGaN leads to positive bowing of the conduction band offsets in AlGaN/GaN heterostructure, and the compressive strain in InGaN leads to negative bowing of conduction band offsets in InGaN/GaN heterostructure as a function of composition. Good agreement is found between predictions and experiment.

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Modelling of Band Offsets in II-VI Heterostructures

Ünlü

2002

phys. stat. sol. (b)

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We present a new tight binding view of band offsets in group II-VI based heterojunctions. The model considers the nonorthogonality of sp 3 set of orbitals of adjacent atoms and the interaction of bonding and antibonding states at high symmetry points in calculating the valence band energies at 0 K and 1 bar. The valence band offsets are then obtained from the difference between the valence band energies, screened by the optical dielectric constants, of bulk semiconductors at equilibrium across interfaces. Excellent agreement with experiment suggests that the bulk band structure properties play significant role in determining the band offsets for lattice matched heterojunctions.

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Tight Binding Modeling of Heterojunction Band Offsets as a Function of Pressure and Composition

Cited by 15 publications

References 21 publications

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Band offsets in III-nitride heterostructures

Modelling of Band Offsets in II-VI Heterostructures

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