Time-averaged electric potential profiles in a capacitive-coupling parallel-plate electrode neon gas RF discharge plasma

Kaneda, Teruo; Kubota, Tadahiro; Ohuchi, Mikio; Chang, Jen‐Shih

doi:10.1088/0022-3727/23/12/023

Cited by 11 publications

(15 citation statements)

References 29 publications

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“…8 It is interesting to estimate to what extent dissociative attachment contributes to the breaking up of CCl 2 F 2 . For highly chlorinated molecules like CCl 4 and CCl 3 F or radicals like CClF 2 , dissociative attachment can be dominant with respect to electron impact dissociation, as these species attach electrons almost at Langevin rates ͑10 Ϫ13 m 3 s Ϫ1 ). 9,10 It is therefore expected that these molecules break up very efficiently under plasma conditions.…”

Section: Reactionsmentioning

confidence: 99%

“…9,10 It is therefore expected that these molecules break up very efficiently under plasma conditions. For other electronegative molecules like CF 4 or SiF 4 , dissociative attachment is much slower and requires a significant threshold energy. 11 Therefore, these molecules are dissociated mainly by electron impact.…”

Section: Reactionsmentioning

confidence: 99%

“…Afterwards the beam is focused onto a mercury cadmium telluride ͑MCT͒ photo-conductive detector, which is sensitive to wave numbers higher than 800 cm Ϫ1 . This means that some multiply chlorinated species ͑CCl 4 , SiCl 4 ) cannot be detected.…”

Section: Infrared Spectroscopymentioning

confidence: 99%

“…In the plasma the CCl 2 F 2 absorption is reduced, from which the dissociation degree can be determined. Note the presence of absorption bands of CF 4 Eq. ͑2͒ and assuming that ass is flow independent, we obtain k dis n e ϭ 12 Hz, which, in combination with the experimental electron density in these conditions n e ϭ 1.5ϫ10 15 m Ϫ3 , gives k dis ϭ 8ϫ10 Ϫ15 m 3 s Ϫ1 .…”

Section: B Dissociation Of CCL 2 Fmentioning

confidence: 99%

“…Optical emission measurements show that the densities of halogen radicals are significantly depleted in presence of Si. Moreover, the densities of several halocarbon molecules display a negative correlation with the density of the etch product SiF 4 . © 1995 American Vacuum Society.…”

mentioning

confidence: 99%

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The chemistry of a CCl2F2 radio frequency discharge

Stoffels

Haverlag

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A systematic study of the chemistry of stable molecules and radicals in a low pressure CCl 2 F 2 radio frequency discharge for dry Si etching has been performed. Various particle densities have been measured and modeled. The electron density, needed as an input parameter to model the CCl 2 F 2 dissociation, is measured by a microwave cavity method. The densities of stable molecules, like CClF 3 , CF 4 , 1,2-C 2 Cl 2 F 4 and the etch product SiF 4 , are measured by Fourier transform absorption spectroscopy. The density of the CF 2 radical is measured by means of absorption spectroscopy with a tunable diode laser. Its density is in the order of 10 19 m Ϫ3 . All density measurements are presented as a function of various plasma parameters. Moreover, optical emission intensities of Cl and F have been recorded as a function of plasma parameters. It appears that the feed gas ͑CCl 2 F 2 ) is substantially dissociated ͑about 70%-90%͒ in the discharge. Based on the obtained data the dissociation rates of several molecules have been estimated. The measured total dissociation rate of CCl 2 F 2 is 8ϫ10 Ϫ15 m 3 s Ϫ1 . For this molecule the dissociation rate is substantially higher than the dissociative attachment rate ͑10 Ϫ15 m 3 s Ϫ1 ). The dissociation rate for CClF 3 is 2ϫ10 Ϫ15 m 3 s Ϫ1and for CF 4 about 3ϫ10 Ϫ16 m 3 s Ϫ1 . The total dissociation rate of C 2 Cl 2 F 4 is higher than 5 ϫ 10 Ϫ15 m 3 s Ϫ1 , of which 2.5Ϯ0.5 ϫ 10 Ϫ15 m 3 s Ϫ1 is due to dissociative attachment. Furthermore it has been found that the presence of a silicon wafer strongly affects the plasma chemistry. Optical emission measurements show that the densities of halogen radicals are significantly depleted in presence of Si. Moreover, the densities of several halocarbon molecules display a negative correlation with the density of the etch product SiF 4 .

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Section: Reactionsmentioning

confidence: 99%

Section: Reactionsmentioning

confidence: 99%

Section: Infrared Spectroscopymentioning

confidence: 99%

Section: B Dissociation Of CCL 2 Fmentioning

confidence: 99%

mentioning

confidence: 99%

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The chemistry of a CCl2F2 radio frequency discharge

Stoffels

Haverlag

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Optical characteristics for capacitively and inductively radio frequency discharge and post-discharge of helium

Tanışlı

Şahi̇n

2016

Physics of Plasmas

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The optical properties for radiofrequency (RF) post-discharge of pure helium (He) with two different methods as capacitively and inductively have been presented using the modified Boltzmann method in comparison. Optical emission spectroscopy (OES) is often used in the diagnosis of laboratory plasma, such as gas discharge plasma. OES is a very useful method for calculating of the electron temperature in the plasma and the determination of different atoms and molecules. In this study, OES is applied for characterizations of capacitively and inductively RF He plasma at pressures between 0.62 and 2.2 mbar for newly reactor type. Plasmas are generated with an RF power generator at a frequency of 13.56 MHz and output powers of 100, 160, and 200 W. Spectra have been evaluated in the range 200–1200 nm by an optical spectrometer. At low pressure, the main spectral features reported are the wavelengths of the atomic He transitions at 388.87 and 728.13 nm. The atomic emission intensities showed a maximum in inductive system when the pressure is about 0.62 mbar. OES of capacitive discharge and inductive discharge is compared in detail. The transition for 587.56 nm is shown to be increased in time.

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Longitudinal structure of capacitative radiofrequency gamma discharge and its analogy with a direct current glow discharge

Raǐzer¹,

Shneider²

1994

J. Phys. D: Appl. Phys.

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The longitudinal structure of a gamma -type RF discharge is computed and shown to have much in common with the structure of a direct current glow discharge. In a sufficiently long gap or at rather high pressures, there are regions of cathode fall, negative glow and Faraday dark space near each of the electrodes. A uniform positive column exists between the electrodes. This pattern is obtained when taking into account non-local effects of the electron spectrum and abandoning Townsend's coefficient to describe the ionization, electron diffusion and electron losses as functions of a local field. The reverse field regions obtained numerically agree with experimental values. It is shown that very low magnitude of the field amplitude and mean electron energy in the plasma are not intrinsic properties of the gamma discharge. The low magnitudes are typical only for sufficiently short gaps and low pressures when the plasma is concentrated in the negative glow region and the Faraday dark space and there is no room for the positive column to form. In long gaps and for high pressure the positive column is formed where the field and electron temperature are as high as in an alpha discharge or in the positive column of a glow discharge.

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Time-averaged electric potential profiles in a capacitive-coupling parallel-plate electrode neon gas RF discharge plasma

Cited by 11 publications

References 29 publications

The chemistry of a CCl2F2 radio frequency discharge

The chemistry of a CCl2F2 radio frequency discharge

Optical characteristics for capacitively and inductively radio frequency discharge and post-discharge of helium

Longitudinal structure of capacitative radiofrequency gamma discharge and its analogy with a direct current glow discharge

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