Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude

Woltjer, R.; Hamada, A.; Takeda, Eiji

doi:10.1109/16.182519

Cited by 69 publications

(10 citation statements)

References 26 publications

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“…However, the relaxation of many systems in nature is far from exponential, as was noticed already in the 19th century by Weber [1]. In many cases, the relaxation is logarithmic: such relaxations have been experimentally observed in the decay of current in superconductors [2], current relaxation in MOSFET devices [3], mechanical relaxation of plant roots [4], volume relaxation of crumpling paper [5] and frictional strength [6], to name but a few. Fig.…”

mentioning

confidence: 90%

On relaxations and aging of various glasses

Amir

Oreg²,

Imry³

2012

Proc. Natl. Acad. Sci. U.S.A.

129

108

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Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow, in many cases logarithmic, and can still be observed after many hours. The form of the relaxation also depends on the duration of the stretching, the "waiting time." This ubiquitous phenomenon is called aging, and is abundant both in natural and technological applications. Here, we suggest a general mechanism for slow relaxations and aging, which predicts logarithmic relaxations, and a particular aging dependence on the waiting time. We demonstrate the generality of the approach by comparing our predictions to experimental data on a diverse range of physical phenomena, from conductance in granular metals to disordered insulators and dirty semiconductors, to the low temperature dielectric properties of glasses.nonequilibrium | slow dynamics | memory effects | 1/f noise P hysicists often take for granted that systems relax exponentially. Indeed, when a capacitor discharges, it will discharge exponentially, with a rate independent of the time it has been charged for. However, the relaxation of many systems in nature is far from exponential, as was noticed already in the 19th century by Weber (1). In many cases, the relaxation is logarithmic: Such relaxations have been experimentally observed in the decay of current in superconductors (2), current relaxation in metal-oxidesemiconductor field-effect transistor devices (3), mechanical relaxation of plant roots (4), volume relaxation of crumpling paper (5), and frictional strength (6), to name but a few. Fig. 1 shows experimental data for electron glasses and for crumpling a thin sheet, which are governed by extremely different physical processes, yet they display identical relaxation behavior, which is logarithmic over a strikingly broad time window.In these systems, in contrast to the capacitor example, the relaxation does depend on the time the system has been perturbed for-in the scientific jargon, this is referred to as "aging." In fact, slow relaxations and aging are amongst the most distinct features of glasses, whose understanding presents an important problem in contemporary condensed matter physics. Much experimental and theoretical attention has been devoted to aging in the past decades, in a variety of fields, such as spin-glass (7-13), colloids (14, 15), vortices in superconductors (16,17), and many others (18-23).Here, we study a generic model for aging and discuss several mechanisms yielding a broad distribution of relaxation rates. We demonstrate the generality of the model on four different experimental systems, measuring the dependence of the relaxation both on time t and on the "waiting time" t w , during which an external perturbation has been applied. We show how the following form of relaxations transpires: Sðt;t w Þ ∝ logð1 þ t w ∕tÞ ¼ logðt w ∕tÞ for t ≪ t w ; t w ∕t for t ≫ t w ;where S is the p...

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mentioning

confidence: 90%

On relaxations and aging of various glasses

Amir

Oreg²,

Imry³

2012

Proc. Natl. Acad. Sci. U.S.A.

129

108

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“…It was also found after a short time of stressing, that the threshold voltage and the slope in the subthreshold region do not change [57], but that the series resistance increases especially on the drain side. Another degradation phenomenon is the reduction in effective channel length 1581, [59], which implies an increase in the series resistance. It was observed that l/f noise level increased a lot in the reverse mode, but hardly changed in the normal mode after hot-carrier stressing when a MOST is biased in saturation [ 1 11, [12].…”

Section: Hot Carrier Degradation Proof Of An?mentioning

confidence: 99%

1/f noise in MOS devices, mobility or number fluctuations?

Vandamme

Rigaud

1994

IEEE Trans. Electron Devices

316

151

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DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

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“…The crumpling of paper is by far not the only example for logarithmically slow dynamics. Experimentally, it is observed in DNA local structure relaxation [2], the time evolution of frictional strength [3], compactification of grains by tapping [4], kinetics of amorphous-amorphous transformations in glasses under high pressure [5], magnetization dynamics in high-T c superconductors [6], conductance relaxations [7,8], and current relaxation in semiconductor field-effect transistors [9]. Theoretical studies of logarithmic time evolution include decays in colloidal systems [10], aging in simple glasses [11] (see also Supplemental Material [12]), magnetization relaxation in spin glasses [13], evolution of node connectivity in a network with uniform attachment [14], diffusion in a random force landscape (Sinai diffusion) [15], and record statistics [16].…”

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Microscopic Origin of the Logarithmic Time Evolution of Aging Processes in Complex Systems

et al. 2013

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There exists compelling experimental evidence in numerous systems for logarithmically slow time evolution, yet its full theoretical understanding remains elusive. We here introduce and study a generic transition process in complex systems, based on nonrenewal, aging waiting times. Each state n of the system follows a local clock initiated at t = 0. The random time τ between clock ticks follows the waiting time density ψ(τ). Transitions between states occur only at local clock ticks and are hence triggered by the local forward waiting time, rather than by ψ(τ). For power-law forms ψ(τ) ≃ τ(-1-α) (0 < α < 1) we obtain a logarithmic time evolution of the state number ⟨n(t)⟩ ≃ log(t/t(0)), while for α > 2 the process becomes normal in the sense that ⟨n(t)⟩ ≃ t. In the intermediate range 1 < α < 2 we find the power-law growth ⟨n(t)⟩ ≃ t(α-1). Our model provides a universal description for transition dynamics between aging and nonaging states.

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Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude

Cited by 69 publications

References 26 publications

On relaxations and aging of various glasses

On relaxations and aging of various glasses

1/f noise in MOS devices, mobility or number fluctuations?

Microscopic Origin of the Logarithmic Time Evolution of Aging Processes in Complex Systems

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