1993
DOI: 10.1088/0268-1242/8/4/015
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Time-dependent theory of a double quantum well resonant interband tunnel transistor

Abstract: A timedependent theory of a double quantum well resonant interband tunnel transistor is presented. The theory is based on a system of three linear differential equations for time-dependent resonant currents and charges stored in the wells. First the stationary resonant current-voltage curve is investigated. Then the general solution for the non-stationary tunnelling current is obtained by the perturbation method. The current is found to be an ultra-sensitive function of the timedependent small external voltage… Show more

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Cited by 5 publications
(2 citation statements)
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“…This highly promising tunnel transistor structures have been intensely investigated in the last decade, for the future industrial application. Among the large variety of proposed models there are some with simple barrier [1], and others that include one or more quantum wells [2]. The first type is based on the modulation of the Fowler-Nordheim tunneling current by the electric field intensity created by an auxiliary electrode.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…This highly promising tunnel transistor structures have been intensely investigated in the last decade, for the future industrial application. Among the large variety of proposed models there are some with simple barrier [1], and others that include one or more quantum wells [2]. The first type is based on the modulation of the Fowler-Nordheim tunneling current by the electric field intensity created by an auxiliary electrode.…”
Section: Introductionmentioning
confidence: 99%
“…Also, lateral structures have been proposed, based on a Columbian barrier generated by a lateral p-n junction, which is easier to control by the gate electrode [5], [6]. There are also some mixed structures [2] where both vertical and horizontal geometries are used, and also some special devices as the magnetic tunnel transistor and the single electron transistor (SET) used as structures in scientific research [9].…”
Section: Introductionmentioning
confidence: 99%