2022
DOI: 10.1002/app.52286
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Time‐of‐flight secondary ion mass spectrometric analysis of polymer surfaces: A review

Abstract: Time of flight-secondary ion mass spectrometry (ToF-SIMS) is a SIMS based surface sensitive technique that provide specific compound identification of surface molecules. Recently, the importance of ToF-SIMS has grown for the characterization and utilization of polymers, pharmaceuticals, semiconductors. The compound specificity of ToF-SIMS distinguishes it from other surface characterization techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and so forth, making it a p… Show more

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Cited by 15 publications
(12 citation statements)
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“…As the primary beam sputters the sample, ToF-SIMS collects three-dimensional compositional data, providing 3D maps for each secondary ion detected with <1 μm 2 lateral resolution. ToF-SIMS is a well-established method for depth profiling inorganic systems, with more recent applications in polymer systems. , Cluster ion beams, with improved high mass sensitivity compared to primary ion sources, have been used successfully to depth profile polystyrene (PS) and polyvinyl­pyrrolidone (PVP) layers to depths of 15 μm, with depth resolution comparable to ellipsometry (<10 nm) . Depth profiling in ToF-SIMS has also been applied to polymer-based cathode materials, for which dopant and ion concentration distributions determine conductive properties .…”
Section: Introductionmentioning
confidence: 99%
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“…As the primary beam sputters the sample, ToF-SIMS collects three-dimensional compositional data, providing 3D maps for each secondary ion detected with <1 μm 2 lateral resolution. ToF-SIMS is a well-established method for depth profiling inorganic systems, with more recent applications in polymer systems. , Cluster ion beams, with improved high mass sensitivity compared to primary ion sources, have been used successfully to depth profile polystyrene (PS) and polyvinyl­pyrrolidone (PVP) layers to depths of 15 μm, with depth resolution comparable to ellipsometry (<10 nm) . Depth profiling in ToF-SIMS has also been applied to polymer-based cathode materials, for which dopant and ion concentration distributions determine conductive properties .…”
Section: Introductionmentioning
confidence: 99%
“…For example, surface oxidation causes high yield of secondary ions, skewing counts in the initial frames of collection. 31,33 Depth profiling analysis is likewise complicated by ion beam mixing, reducing depth resolution.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…In its future perspective section, this review also calls for standardized methods as well as optimized methods of sample collection and extraction. The fifth review was presented by Prasad et al 108 and discussed the TOF-SIMS analysis of polymer surfaces (59 refs). In the introduction, the review sets out the history of TOF-SIMS and describes its advantages over other surface techniques such as Auger electron spectroscopy and XPS.…”
Section: Organic Chemical and Materialsmentioning
confidence: 99%