Time of flight study of high performance CVD diamond detector devices

Tranchant, Nicolas; Nesládek, Miloš; Tromson, D.; Remeš, Z.; Bogdan, Anna; Bergonzo, P.

doi:10.1002/pssa.200776342

Cited by 32 publications

(14 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In the effort to find an explanation to the noise increase, the latter can be attributed to the decrease of the hole mobility with temperature increase [18] which can produce polarization effects in the active region. These polarization effects can be enhanced at the interface detector-metal contact due also to the reduced carrier mobility in metal with temperature.…”

Section: Discussionmentioning

confidence: 99%

Spectrometric Performances of Monocrystalline Artificial Diamond Detectors Operated at High Temperature

Angelone

Fonnesu

Pillon

et al. 2012

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Abstract-This paper reports about the performances of single crystal diamond (SCD) detectors operated at high temperature (up to 200 C) and irradiated with alpha particles. Two different types of SCD detectors were studied: a) SCD of commercial type; b) SCD produced at Rome "Tor Vergata" University and characterized by a layered structure.The first measurement of the response function vs. temperature of commercial SCD detector irradiated with 14 MeV neutrons and heated up to 140 C is also reported.The measurements pointed out the superior performance of diamond with respect to other detectors (e.g., silicon) when operated at high temperature. However, the present work also pointed out that a diamond detector assembled to operate at room temperature can suffer from mechanical stress when operated at high temperature. The results indicate that, with a proper design, diamond detectors can be suitable for operation at high temperature.Index Terms-Artificial single crystal diamond, high temperature detectors, neutron detectors, neutron spectrometry, radiation detector.

show abstract

Section: Discussionmentioning

confidence: 99%

Spectrometric Performances of Monocrystalline Artificial Diamond Detectors Operated at High Temperature

Angelone

Fonnesu

Pillon

et al. 2012

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…Controlling impurity concentrations is very difficult in HPHT synthesis but CVD can be used to produce diamond material of high purity or with controlled doping [1][2][3][4][5][6][7]. For this reason, CVD diamond has potential applications in electronics which are not open to HPHT-grown diamond.…”

mentioning

confidence: 97%

Effect of steps on dislocations in CVD diamond grown on {001} substrates

Martineau¹,

Gaukroger²,

Khan³

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Single crystal CVD synthetic diamond samples grown on (001) substrates have been studied using X‐ray topography, photoluminescence imaging, cathodoluminescence imaging and transmission electron microscopy. X‐ray section topographs sampling a plane very close to the surface of a (010) cross‐sectional slice show contrast that is closely correlated with photoluminescence image contrast relating to differences in incorporation of point defects on step risers and terraces during growth. The point defect content is too low to influence X‐ray topography contrast and therefore the correlation suggests a difference between the dislocation content for terrace and riser growth. Dislocations imaged in cathodoluminescence have been observed to follow paths that are strongly influenced by step flow during growth. Transmission electron micrographs show [001] dislocations with sections of <110> 60° or edge dislocations in configurations consistent with formation as a result of step flow growth. It is proposed that a passing riser can cause dislocations to switch from [001] to [101] line direction when this minimises the increase in the energy associated with the dislocation as riser growth proceeds. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…In the ToF method, electronhole pairs are created by pulsed irradiation of the sample with particles or photons having an energy higher than the diamond bandgap (5.47 eV). Several sources can be used to provide the needed energy: a-particles, 9,12 pulsed electron beams, 11 pulsed particle beams, 14 pulsed X-rays, 15 or by Qswitched UV laser, 1,[16][17][18][19] as in this study. For the interpretation of the data, finite element method (FEM) drift-diffusion simulations using the software package COMSOL Multiphysics have been performed.…”

mentioning

confidence: 99%