A charge transport study in diamond, surface passivated by high-<i>k</i> dielectric oxides

Kovi, Kiran Kumar; Majdi, Saman; Gabrysch, Markus; Isberg, Jan

doi:10.1063/1.4901961

Cited by 10 publications

(7 citation statements)

References 24 publications

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“…The surface roughness of the films is observed to increase when the oxygen gas concentration is increased during processing, which corresponds to previous reports . Our roughness results are similar as those obtained by other groups working with the well‐studied precursor TEOS …”

Section: Resultssupporting

confidence: 91%

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di‐t‐butoxydiacetoxysilane

Vervaele

Roo

Debehets³

et al. 2017

Adv Eng Mater

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In this work, an unusual silicon chemical vapor deposition precursor is used, which allows the safe deposition of thin silica films in a controlled and reproducible manner at a lower thermal budget with a newly developed direct liquid injection À low pressure chemical vapor deposition system. The deposition is controlled by parameters such as deposition temperature, partial pressure of the gases, and flow rate of the precursor solution. X-ray reflectivity and spectroscopic ellipsometry of the deposited samples show that the thickness of the layers is well controlled by deposition temperature, time, and oxygen flow. A growth rate of 4.5 Am in À1 is obtained without the addition of oxygen, which can be increased to 10.2 Åmin À1 by the addition of oxygen. Atomic force microscopy, Rutherford backscattering spectroscopy, Fourier transform infrared spectroscopy, and drop shape analysis are used to measure roughness, composition, and hydrophobicity. Thin films of silicon dioxide are successfully grown. In addition, this newly developed system can be used for a wide range of films by varying the precursors or by co-injecting nanoparticles suspension mixed with the chemical vapor deposition precursor in the direct liquid injection vaporizer.

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Section: Resultssupporting

confidence: 91%

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di‐t‐butoxydiacetoxysilane

Vervaele

Roo

Debehets³

et al. 2017

Adv Eng Mater

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“…A small peak has been found around 600 cm À1 , which corresponds to Si-O stretch. [37][38][39] Static contact angle measurements of samples T6 is performed and is illustrated in Figure 6b. The small peak at 1 260 cm À1 , corresponding to Si-CH x deformation, might be explained by the incomplete shielding of the silica surface with trimethylsilyl groups (the area occupied by each ÀSi(CH 3 ) 3 group is 0.416 nm 2 ) from contact with water.…”

Section: Sample Namementioning

confidence: 99%

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

et al. 2017

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In this work, the use of a newly developed direct liquid injection low pressure chemical vapor deposition (DLI-LPCVD) system is described, which allows for the deposition of thin films in a controlled and reproducible manner. The capabilities of this system are described via silica thin films deposited using the precursor tetraethyl orthosilicate (TEOS). The deposition of thin films is controlled by parameters, such as deposition temperature, partial pressure of the gases, and flow rate of the precursor solution. The thickness of the deposited layer is varied simply by changing deposition temperature and time. X-ray reflectivity and spectroscopic ellipsometry of the deposited samples show that the thickness of the layers is well controlled by deposition temperature and time. Auger electron spectroscopy, in addition, motivates our choice to use cyclohexane as a solvent. A growth rate of 12.2 Åmin À1 is obtained. Atomic force microscopy, Rutherford backscattering spectroscopy, Fourier transform infrared spectroscopy, and drop shape analysis are used to measure roughness, composition, and hydrophobicity. Thin films of silicon dioxide are successfully grown by the newly developed DLI-LPCVD system. This system can be used for a wide range of films by varying the precursors.

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“…A lower than ideal performance in electronic gates can be explained by the formation of defect-related fixed charges 13,14 . The monoclinic phase has been well studied both experimentally via scattering techniques 15,16 , and theoretically using DFT 4,[17][18][19] . Moreover, first-principles calculations carried out on the low-temperature monoclinic phase of hafnia with oxygen vacancies and oxygen interstitials suggest that the oxygen vacancies represent the main electron traps 18 .…”

Section: Introductionmentioning

confidence: 99%

Defect energetics of cubic hafnia from quantum Monte Carlo simulations

Chimata

Shin

Benali

et al. 2019

Phys. Rev. Materials

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Cubic hafnia (HfO2) is of great interest for a number of applications in electronics because of its high dielectric constant. However, common defects in such applications degrade the properties of hafina. We have investigated the electronic properties of oxygen vacancies and nitrogen substitution in cubic HfO2 using first principles calculations based on density functional theory (DFT) and manybody diffusion Monte Carlo (DMC) methods. We investigate five different charge defect states of oxygen vacancies, as well as substitutional N defects which can lead to local magnetic moments.Both DMC and DFT calculations shows that an oxygen vacancy induces strong lattice relaxations around the defect. Finally, we compare defect formation energies, charge and spin densities obtained from DMC with results obtained using DFT. While the obtained formation energies from DMC are 0.6 eV -1.5 eV larger than those from GGA+U, the agreement for the most important defects, neutral and positively charged oxygen vacancies, and nitrogen substitutional defect, under oxygenpoor conditions are in reasonably good agreement. Our work confirms that nitrogen can act to passivate cubic hafnia for applications in electronics. I.arXiv:1904.06445v1 [cond-mat.mtrl-sci]

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A charge transport study in diamond, surface passivated by high-k dielectric oxides

Abstract: Articles you may be interested inIsotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

Cited by 10 publications

References 24 publications

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di‐t‐butoxydiacetoxysilane

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di‐t‐butoxydiacetoxysilane

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

Defect energetics of cubic hafnia from quantum Monte Carlo simulations

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