Time-Resolved 1.5 µm-Band Photoluminescence of Highly Oriented β-FeSi₂Films Prepared by Magnetron-Sputtering Deposition

Electroluminescence and Response Characterization of β-FeSi2-Based Light-Emitting Diodes

“…In our previous work, the EL/RT of a 1.5 mmband was realized from highly oriented -FeSi 2 films prepared by magnetron-sputtering deposition, 5) and very recently, the carrier life time of our -FeSi 2 films was found to be in the order of sub-nanosecond or even shorter. 6) In this work, we report, for the first time, the response properties of a -FeSi 2 -based light-emitting diode. Temperature-dependant EL was also investigated in this work.…”

Formation of β-FeSi2 thin films on non-silicon substrates

“…2(a)). This value is significantly lower than that required on the above insulating substrate materials and silicon substrates with the same thickness [1,2,14,20]. Other oriented β-FeSi 2 peaks appeared with the temperature increasing to 350°C, indicating that polycrystalline β-FeSi 2 films were formed.…”

“…In recent years, epitaxial iron disilicide (β-FeSi 2 ) thin film on silicon has attracted increasing research interests because of its potential applicability for new optoelectronic devices such as light emitting diodes and photo sensors both operating at a wavelength of ∼ 1.5 μm relevant to the optical fiber telecommunication [1][2][3]. Photovoltaic application of β-FeSi 2 thin film is another promising direction own to its high optical absorption coefficient (higher than 10 5 cm − 1 above 1.0 eV) [4,5].…”

1.55µm photoluminescent iron silicide prepared by thermal diffusion of Iron nanoparticles into Si Substrate

“…1. It is found that the broaden peak at 1.55 μm resulted from iron silicide [7]. In addition, it is also found that the peak between 1.58 μm and 1.61 μm is contributed to intrinsic iron disilicide and impurity band transition, respectively [8].…”