Time-resolved carrier tunneling in nanocrystalline silicon/amorphous silicon dioxide superlattices

Duzhko, Volodimyr V.; Tsybeskov, L.

doi:10.1063/1.1630151

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…For example, a-Si thermal conductivity is reduced by approximately 100 times compared to that in c-Si, while carrier mobility is reduced by a factor of 10 4 -10 5 [175,176]. Very similar trend is found in Si-based nanostructures including PSi [177,178] and tunnel transparent nc-Si/SiO 2 multilayers [179]. Therefore, one can conclude that the effort in semiconductor nanostructure-based thermoelectric devices should not be entirely focused on the thermal conductivity reduction but rather on an engineering solution using the balance between thermal and electric transport in these truly fascinating systems.…”

Section: Discussionmentioning

confidence: 52%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Section: Discussionmentioning

confidence: 52%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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Structural characteristics of a multilayer of silicon rich oxide (SRO) with high Si content prepared by LPCVD

Quiroga

Bensch

et al. 2009

Physica Status Solidi (a)

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Single layer films and a multilayer structure of SRO (Silicon Rich Oxide) have been prepared by LPCVD (Low Pressure Chemical Vapour Deposition) and characterized by FTIR, SIMS, XPS, TEM and AFM measurements. The stacked structure is composed of alternating layers of SRO with high Si content and SRO with low Si content. The layered structure is confirmed by SIMS and TEM measurements. The composition of the materials is discussed. Besides Si nanocrystals, the existence of agglomerates of silicon oxide with structure close to fused silica and the existence of oxynitrides is evidenced in the films with high Si content. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

Hazra

Sakata

Yamanaka

et al. 2004

Journal of Applied Physics

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We have fabricated silicon nanocrystals with different dimensions by the thermal annealing and thermal oxidation of ultrathin hydrogenated amorphous silicon (a-Si:H) films (2–10nm) deposited by thermal chemical vapor deposition. Dimensions of silicon nanodots are the function of thickness of the ultrathin a-Si:H film. Therefore, we can change the dimensions of silicon nanodots (3–10nm) by varying the a-Si:H film thickness according to our requirements. From our experimental studies, we have drawn a calibration curve of required a-Si:H film thickness against the average dimension of fabricated crystalline grains.

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Time-resolved carrier tunneling in nanocrystalline silicon/amorphous silicon dioxide superlattices

Cited by 4 publications

References 15 publications

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Structural characteristics of a multilayer of silicon rich oxide (SRO) with high Si content prepared by LPCVD

Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

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