Time-resolved cyclotron resonance on dislocation-free HPHT diamond

Akimoto, Ikuko; Naka, N.; Tokuda, Norio

doi:10.1016/j.diamond.2015.08.013

Cited by 27 publications

(14 citation statements)

References 26 publications

(42 reference statements)

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“…μ FE of the present diamond MOSFETs with an inversion channel was 8.0 cm2/Vs. Electron μ e and hole mobility μ h of diamond bulk are greater than 3,000 cm2/Vs at room temperature ( μ e = 7,300 and μ h = 5,300 cm2/Vs by time-resolved cyclotron resonance and μ e = 4,500 and μ h = 3,800 cm2/Vs by time-of-flight)2930. Generally, when a high-quality MOS interface is used, μ FE of approximately one half of μ e and μ h can be obtained in the case of Si MOSFETs.…”

Section: Discussionmentioning

confidence: 99%

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Matsumoto

Kato

Oyama

et al. 2016

Sci Rep

168

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We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature.

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Section: Discussionmentioning

confidence: 99%

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Matsumoto

Kato

Oyama

et al. 2016

Sci Rep

168

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“…Normalized temporal changes of microwave absorption measured for the light hole in Samples A–E at 10 K. The photon energy for injection was 5.50 eV for Samples A, D, and E, and 5.54 eV for Samples B and C. Redrawn from Refs. .…”

Section: Free‐carrier Mobility In High‐purity Diamondmentioning

confidence: 99%

“…Samples D and E showed somewhat broadened but clear CR peaks up to 30 K (). Figure b shows the temperature dependence of inverse momentum relaxation times in Sample E. A deformation potential of 7.6 eV was used for the calculation for the heavy hole.…”

Section: Free‐carrier Mobility In High‐purity Diamondmentioning

confidence: 99%

“…Ultrahigh diffusivity () and submicrosecond lifetime () of excitons, i.e., Coulomb‐bound pairs of an electron and a hole, were revealed using time‐resolved photoluminescence imaging. Moreover, the cyclotron resonance technique was applied to diamond substrates grown using the high‐pressure high‐temperature (HPHT) method to clarify effects of dislocations on carrier drift mobility ().…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Excitons and fundamental transport properties of diamond under photo‐injection

Naka

Morimoto

Akimoto

2016

Physica Status Solidi (a)

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Abstractauthoren Exciton diffusivity and carrier mobility are key features in determining transport properties of a material. The optimum values required for high‐performance devices are expected to be realized in undoped intrinsic materials. Diamond, one of the emergent high‐mobility materials, has a wide band gap suited for use in power electronics and optoelectronics. For many years, however, mobility measurement for diamond has been limited by carrier freezing at deep impurity levels. Recently, attempts at utilizing photoexcited carriers in undoped diamond have been made in a wide temperature range and various excitation schemes. A series of investigations demonstrated a wealth of intriguing observations such as dominant role of excitons and emergence of low‐temperature anomaly in momentum relaxation. This article highlights recent experimental advances and progresses in understanding transport properties of photoexcited intrinsic diamond.

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“…In this chapter, our recent experimental contributions to clarify the basic and intrinsic carrier parameters in a diamond will be introduced [21][22][23][24][25][26][27]. The measurement has been performed by a time-resolved cyclotron resonance method under optical carrier injection in pure diamond crystals.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic Carrier Parameters and Optical Carrier Injection Method in High-Purity Diamonds

Akimoto¹,

Naka²

2020

Some Aspects of Diamonds in Scientific Research and High Technology

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Diamond attracts increasing attentions as a semiconductor, since high-purity synthesized diamonds have become commercially available in these decades. For appropriate design of any devices, the basic carrier transport parameters should be known. However, it has been difficult to determine carrier parameters in diamond, because the controlled doping and Ohmic contact formation have been hard to achieve. In this chapter, a modern experimental method to measure basic carrier parameters, such as the effective mass, scattering times, and mobility of intrinsic diamonds, is introduced. The method, i.e., nanosecond time-resolved cyclotron resonance (TRCR), is applicable to optically injected carriers in intrinsic diamonds without wire connection. Following the key technique of optical carrier injection, detailed analysis methods for the cyclotron resonance spectra are introduced. The extracted basic parameters of diamond are summarized in comparison to those of silicon and germanium in the same group-IV semiconductor family. This is worthy for triggering further ideas in application-oriented researches using widespread materials.

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Time-resolved cyclotron resonance on dislocation-free HPHT diamond

Cited by 27 publications

References 26 publications

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Excitons and fundamental transport properties of diamond under photo‐injection

Intrinsic Carrier Parameters and Optical Carrier Injection Method in High-Purity Diamonds

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