Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti–Cu thin films

Straňák, Vítězslav; Čada, Martin; Hubička, Zdeněk; Tichý, M.; Hippler, R.

doi:10.1063/1.3467001

Cited by 61 publications

(30 citation statements)

References 35 publications

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“…The largest ion flux density j i ≈ 80 mA/cm 2 (for a probe bias voltage U B = -30 V and probe placed between magnetrons) was measured during the first (Ti) pulse roughly 30 μs after discharge ignition, see figure 5. The ion flux is about two orders of magnitude larger than values obtained in dc magnetron sputtering [25,34]. Such high ion fluxes are caused by the highly ionized HiPIMS plasma where all ion flux contributions (Ar + , Ti + , Cu + ) contribute.…”

Section: Ion Flux To the Substratementioning

confidence: 94%

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Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

Straňák

Drache

Čada

et al. 2011

Contrib. Plasma Phys.

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Time-resolved measurements have been performed during dual High Power Impulse Magnetron Sputtering (dual-HiPIMS) with two cathodes in a closed magnetic field configuration. The effect of a delay between subsequent pulses on electron density, mean electron energy, and ion flux to the substrate was investigated by time-resolved diagnostic methods. Two different delays of 15 μs and 500 μs between subsequent pulses were investigated. The dual-HiPIMS system, operated at a repetition frequency f = 100 Hz and duty cycle of 1 %, was equipped with different metallic targets (Ti, Cu). It is shown that a delay between subsequent pulses influences the plasma parameters and can be used to control deposition processes. It was noted that target surfaces (alternately serving as a cathode/anode) are contaminated by sputtered material from the previous pulse which influences the time-evolution of the discharge parameters.

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Section: Ion Flux To the Substratementioning

confidence: 94%

“…The experimental set-up has been described in detail elsewhere [25]. It consists of a vacuum chamber pumped by a turbomolecular pump to a base pressure of better than 10 −5 Pa. A dual-HiPIMS system with closed magnetic field has been developed for deposition of Ti-Cu films.…”

Section: Methodsmentioning

confidence: 99%

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

Straňák

Drache

Čada

et al. 2011

Contrib. Plasma Phys.

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“…104 A dual magnetron sputtering system for deposition inside tubular substrates has been developed using a combination of dcMS and HiPIMS discharges arranged in the open field configuration 105 and a dual HiPIMS discharge in the closed field configuration has been demonstrated. 106 In the closed configuration (using unbalanced magnetrons of type II, with stronger outer poles) a virtual anode between the magnetrons can be avoided, and the expansion of the plasma to fill the space between the magnetrons is promoted. This was developed further into unbalanced multimagnetron sputtering systems referred to as closed field unbalanced multimagnetron systems (CFUBMS).…”

Section: Discharge Configurationmentioning

confidence: 99%

High power impulse magnetron sputtering discharge

Guðmundsson¹,

Brenning²,

Lundin³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

637

446

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The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

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“…Magnetrons are often used in dual-magnetron configuration [320][321][322] to address the "disappearing anode" problem in reactive deposition; the principle has been extended to HiPIMS [323][324][325]. To increase the HiPIMS deposition rate, a HiPIMS-rf hybrid scheme can be employed [326].…”

Section: Deposition In Vacuummentioning

confidence: 99%

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

Anders

2014

Surface and Coatings Technology

242

109

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High power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in this review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.

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Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti–Cu thin films

Cited by 61 publications

References 35 publications

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

High power impulse magnetron sputtering discharge

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

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