Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

H, Schoene,; Walsh, D S; Sexton, F W; Doyle, B L; F, Aurand, J; Dodd, P E; Flores, R S; Wing, N. D.

doi:10.2172/663234

Cited by 6 publications

(7 citation statements)

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“…Broadbeam charge collection spectroscopy measurements have been used to determine SEU-sensitive volumes in SRAMs [39]- [41], and ion microbeams and lasers have been used with high-speed sampling oscilloscopes to measure charge-collection transients in Si devices [42]- [44]. Ion microbeams and lasers have also been used to map integrated charge collection as a function of position in ICs [45], [46] and more recently as a function of both time and position [47]. The physics of charge collection have also been studied in detail through the use of two-dimensional (2-D) and three-dimensional (3-D) numerical simulation [48], [49].…”

Section: B Charge Collectionmentioning

confidence: 99%

Basic mechanisms and modeling of single-event upset in digital microelectronics

Dodd

Massengill

2003

IEEE Trans. Nucl. Sci.

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901

427

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Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.

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Section: B Charge Collectionmentioning

confidence: 99%

Basic mechanisms and modeling of single-event upset in digital microelectronics

Dodd

Massengill

2003

IEEE Trans. Nucl. Sci.

Self Cite

901

427

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“…This work also prompted the development of timeresolved IBIC for measuring the time evolution of charge transients due to the passage of single high-energy ions through and close to device junctions and in wafers [28,80,81]. Applications of IBIC in combination with single event upset imaging to study the response of devices to high-energy ion irradiation effects are outlined in Section 6.…”

Section: Review Of Ibic Applicationsmentioning

confidence: 99%

“…TRIBIC measurements were performed first by Schö ne [80,81] and currently two laboratories use it regularly for device analysis, Sandia National Laboratories [113][114][115][116] and the Radiation Effects Group at JAEA, Takasaki [117,118]. Results of a collaborative experiment between these two groups on MOS capacitors using the Sandia nuclear microprobe are shown here.…”

Section: Tribic Analysis Of Soi Capacitorsmentioning

confidence: 99%

A review of ion beam induced charge microscopy

Breese

Vittone²,

Vizkelethy

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

100

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“…Ions were focused to a submicron spot size. Charge collection in SRAMs was measured using ion beam induced charge collection (IBICC) [11] and on capacitors using IBICC and time-resolved ion beam charge collection (TRIBICC) [12]. IBICC and TRIBICC measurements were taken as the focused ion beam was electrostatically scanned across the SRAM or capacitor being tested to generate two-dimensional (2-D) images of charge collection across the scanned region [11].…”

Section: B Experimental Techniquementioning

confidence: 99%

Charge collection in SOI capacitors and circuits and its effect on SEU hardness

Schwank

Dodd

Shaneyfelt

et al. 2002

IEEE Trans. Nucl. Sci.

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Focused ion microbeam and broadbeam heavy-ion experiments on capacitors and SRAMs are used to investigate increased saturation upset cross sections recently observed in some silicon-on-insulator (SOI) integrated circuits (ICs). Experiments performed on capacitors show a very strong bias and oxide thickness dependence for charge collection. In combination with three-dimensional (3-D) simulations, these data suggest that the mechanism for charge collection in capacitors is due to perturbation of the substrate electric fields by charge deposition in the substrate. For substrates biased in depletion, these perturbations induce displacement currents through the oxide. Charge collection by displacement currents can be substantially reduced or mitigated by using heavily doped substrates. Experiments performed on SRAMs also show enhanced charge collection from displacement currents. However, experimental data and 3-D simulations show that for SRAMs, a second mechanism also contributes to charge collection. The 3-D simulations suggest that the charge collection results from drain and body-tie heavy-ion strikes within a few tenths of a micron of the body-to-drain junctions. These charge collection mechanisms can substantially reduce the SEU hardness and soft-error reliability of commercial SOI ICs.

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Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

Abstract: Abstractbetween experimental results and charge collection simulation persist. As an example, the measured total charge col-

Cited by 6 publications

References 0 publications

Basic mechanisms and modeling of single-event upset in digital microelectronics

Basic mechanisms and modeling of single-event upset in digital microelectronics

A review of ion beam induced charge microscopy

Charge collection in SOI capacitors and circuits and its effect on SEU hardness

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