Time-resolved optical second harmonic generation study of the electric field dynamics at a metal-semiconductor interface

Jong, de W Wim; Etteger, van Af; Hof, van 't Ca; Hall, van Pj Piet; Rasing, T.H.M.

doi:10.1016/0039-6028(95)01280-x

Cited by 4 publications

(1 citation statement)

References 18 publications

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“…The size of the signal, which is a consequence of the surface sensitivity of SHG and the localized nature of the electron±phonon interaction, is very encouraging and suggests that this technique could be used to probe electron±pho-non interactions at surfaces and to drive non-thermal surface chemical reactions [50]. In related work, Rasing and co-workers were able to extend their previous study [52] on Schottky barrier plasma oscillations to identify plasma±phonon coupling with both the bulk LO phonon at %37 meV, and a surface phonon at %32 meV [51].…”

Section: Time-resolved Studiesmentioning

confidence: 82%

Optical Second-Harmonic Generation as a Semiconductor Surface and Interface Probe

McGilp

1999

phys. stat. sol. (a)

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Optical second‐harmonic generation, although a sophisticated technique, is making a significant contribution to the characterization of surfaces and interfaces. Advantages include: all pressure ranges being accessible; insulators being studied without the problem of charging effects; solid–solid and solid–liquid interfaces being characterized by utilizing the large penetration depth of optical radiation. Single wavelength studies yield information on the crystallographic and magnetic structure of surfaces and interfaces, and are particularly sensitive to symmetry changes. Spectroscopic and time‐resolved studies, which have recently become simpler due to the availability of high pulse power, tunable, broad band laser sources, additionally provide electronic structure and dynamics information, although interpretation may not be simple. Recent examples from well‐characterized semiconductor interfaces are discussed, and it is shown that the technique is now well understood at the phenomenological level, although theoretical calculations are proving to be difficult.

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Section: Time-resolved Studiesmentioning

confidence: 82%

Optical Second-Harmonic Generation as a Semiconductor Surface and Interface Probe

McGilp

1999

phys. stat. sol. (a)

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Coherent Plasmon–Phonon Oscillations in a GaAs Schottky Barrier Sample

Hall

Jong²,

Etteger³

et al. 1997

phys. stat. sol. (b)

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Depletion-electric-field-induced second-harmonic generation near oxidized GaAs(001) surfaces

et al. 1997

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Second-order nonlinear mixing is evaluated as a probe of the depletion electric field in the near-surface region of GaAs͑001͒. A phenomenological model is presented whereby the nonlinear susceptibility is expanded in the depletion electric field. For GaAs, three terms contribute to the observed nonlinear mixing: the dipole-allowed bulk contribution and first-and second-order contributions in the depletion electric field. All three contributions can be isolated by a combination of rotational anisotropy and photomodulation studies. The second-harmonic signal from oxidized GaAs͑001͒ surfaces was measured as a function of azimuthal sample orientation, photomodulation, and dopant density for fundamental photon energies in the region 1.17-1.51 eV. The first-order depletion-electric-field contribution dominates the second-order contribution, and can be comparable to the intrinsic bulk contribution for high surface fields. The results rule out significant contributions arising from either bulk electric quadrupole or surface dipole effects. ͓S0163-1829͑97͒00616-4͔

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Time-resolved optical second harmonic generation study of the electric field dynamics at a metal-semiconductor interface

Cited by 4 publications

References 18 publications

Optical Second-Harmonic Generation as a Semiconductor Surface and Interface Probe

Optical Second-Harmonic Generation as a Semiconductor Surface and Interface Probe

Coherent Plasmon–Phonon Oscillations in a GaAs Schottky Barrier Sample

Depletion-electric-field-induced second-harmonic generation near oxidized GaAs(001) surfaces

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