2020
DOI: 10.1063/1.5139636
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Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

Abstract: The monolithic growth of III-V materials directly on Si substrates provides a promising integration approach for passive and active silicon photonic integrated circuits (PICs) but still faces great challenges in crystal quality due to misfit defect formation. Nano-ridge engineering (NRE) is a new approach which enables the integration of III-V based devices on trench-patterned Si substrates with very high crystal quality. Using selective area growth (SAG) III-V material is deposited into narrow trenches to red… Show more

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Cited by 9 publications
(4 citation statements)
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“…Therefore, the angle between the {111} planes and the (001) substrate surface determine a minimal AR of 1.43, which is necessary to block defects nucleated at the III-V/Si surface. However, most of the time a higher AR is required to achieve an efficient defect trapping, as remaining strain fields might initiate new misfit defects in an III-V region above the interface [49]. Therefore, it is very important to achieve full relaxation as close as possible to the III-V/Si interface to suppress the presence of residual strain fields and, hence, avoid new misfit formation.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the angle between the {111} planes and the (001) substrate surface determine a minimal AR of 1.43, which is necessary to block defects nucleated at the III-V/Si surface. However, most of the time a higher AR is required to achieve an efficient defect trapping, as remaining strain fields might initiate new misfit defects in an III-V region above the interface [49]. Therefore, it is very important to achieve full relaxation as close as possible to the III-V/Si interface to suppress the presence of residual strain fields and, hence, avoid new misfit formation.…”
Section: Resultsmentioning
confidence: 99%
“…S3). (2) We do not include an additional confinement energy due to quantization along the length of the NW, due to the inclusion of cubic stacking faults. The alignment between cubic and hexagonal stacking is expected to be of type-I 47,53 , and every hexagonal segment with a direct bandgap is thus bound by cubic barriers with larger bandgap (Fig.…”
Section: Discussionmentioning
confidence: 99%
“…The Si PL peak is not observed at this low pump intensity. The inset of figure 2 shows the time-resolved PL signal (tr-PL) at 1030 nm wavelength and a fit to a one-term exponential model [21]:…”
Section: Device Design and Fabricationmentioning
confidence: 99%