Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

Meftah, A.; Ajlani, H.; Aloulou, S.; Oueslati, M.; Scalbert, D.; Allègre, J.; Maâref, H.

doi:10.1016/j.jlumin.2007.12.042

Journal of Luminescence

2008

DOI: 10.1016/j.jlumin.2007.12.042

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Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

A. Meftah

H. Ajlani

S. Aloulou

et al.

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Cited by 8 publications

(1 citation statement)

References 25 publications

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“…3 Therefore, the electro-optical modulation of excitonic emission/absorption with a far larger dynamic range (∼exciton binding energy) can be envisioned in TMD HSs. Third, the lifetime of radiative recombination in 2D TMDs (a few picoseconds) 4 is shorter than that in conventional GaAs/AlGaAs HSs (several hundreds of picoseconds), 5 which is a distinctive feature for the design of potentially faster and more efficient optical modulators and light emitters using TMD HSs.…”

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confidence: 99%

Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides

Taghinejad

Eftekhar

et al. 2020

ACS Nano

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Heterostructures of two-dimensional transition metal dichalcogenides (TMDs) can offer a plethora of opportunities in condensed matter physics, materials science, and device engineering. However, despite state-of-the-art demonstrations, most current methods lack enough degrees of freedom for the synthesis of heterostructures with engineerable properties. Here, we demonstrate that combining a postgrowth chalcogen-swapping procedure with the standard lithography enables the realization of lateral TMD heterostructures with controllable dimensions and spatial profiles in predefined locations on a substrate. Indeed, our protocol receives a monolithic TMD monolayer (e.g., MoSe 2 ) as the input and delivers lateral heterostructures (e.g., MoSe 2 −MoS 2 ) with fully engineerable morphologies. In addition, through establishing MoS 2x Se 2(1−x) −MoS 2y Se 2(1−y) lateral junctions, our synthesis protocol offers an extra degree of freedom for engineering the band gap energies up to ∼320 meV on each side of the heterostructure junction via changing x and y independently. Our electron microscopy analysis reveals that such continuous tuning stems from the random intermixing of sulfur and selenium atoms following the chalcogen swapping. We believe that, by adding an engineering flavor to the synthesis of TMD heterostructures, our study lowers the barrier for the integration of twodimensional materials into practical optoelectronic platforms.

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confidence: 99%

Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides

Taghinejad

Eftekhar

et al. 2020

ACS Nano

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Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy

Daoudi

Dhifallah

Ouerghi³

et al. 2015

Optik

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Energy band‐gap shift with gamma-ray radiation and carbon n-delta-doping in GaAs/AlGaAs QWs structures

Daoudi

Hosni

Khalifa

et al. 2014

Physica B: Condensed Matter

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Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

Cited by 8 publications

References 25 publications

Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides

Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides

Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy

Energy band‐gap shift with gamma-ray radiation and carbon n-delta-doping in GaAs/AlGaAs QWs structures

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