Time-resolved photoluminescence of type-I and type-II<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">GaIn</mml:mi><mml:mo>)</mml:mo><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mo>(</mml:mo><mml:mi mathvariant="normal">NAs</mml:mi><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>heterostructures

Hantke, K.; Heber, Joerg; Schlichenmaier, C.; Thränhardt, A.; Meier, Torsten; Kunert, B.; Volz, Kerstin; Stolz, W.; Koch, Stefan; Rühle, W. W.

doi:10.1103/physrevb.71.165320

Cited by 22 publications

(11 citation statements)

References 24 publications

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“…Actually, the experimental evidences in this work just suggest type-II radiative transitions at the WZ/ZB interface for the transition at higher energy. As the experimental evidence for the location of the carriers is now weaker, the possibility of transitions of type-I [69–70] should be considered despite the polytypism expected for the nanowires. These results are compatible with the increase of mobility observed for the raise of the free hole concentration.…”

Section: Discussionmentioning

confidence: 99%

Substrate and Mg doping effects in GaAs nanowires

Kannappan¹,

Sédrine²,

Teixeira³

et al. 2017

Beilstein J. Nanotechnol.

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Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii) a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111); iii) the occurrence of a higher WZ phase fraction, in particular for growth on Si(111); iv) an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2 /Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested.

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Section: Discussionmentioning

confidence: 99%

Substrate and Mg doping effects in GaAs nanowires

Kannappan¹,

Sédrine²,

Teixeira³

et al. 2017

Beilstein J. Nanotechnol.

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“…Carrier-carrier as well as carrier-phonon scattering processes are included by a scattering rate approach 12,13 with microscopically determined scattering rates. 14,15 The carrier losses due to spontaneous emission and Auger processes are calculated microscopically, 16,17 while the probe specific monomolecular loss rate is assumed to be 10 7 s −1 . 18 Using microscopically motivated carrier temperature and density dependent polarization dephasing times, we can calculate the absorption spectrum of the quantum wells for different equilibrium carrier distributions.…”

Section: Microscopic Simulation Of Nonequilibrium Features In Quantummentioning

confidence: 99%

Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

Kühn¹,

Koch²,

Thränhardt³

et al. 2010

Applied Physics Letters

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“…This structure turns out to be type II, i.e. while the holes are confined in the quantum well, the electrons are located in the barriers (Hantke et al 2005;Schlichenmaier et al 2005). In contrast, structure A is a spatially direct (type I) structure.…”

Section: Carrier-carrier Scatteringmentioning

confidence: 87%

“…For the case of the dilute nitride samples shown, the nitrogen level has been included via an anticrossing model (Lindsay and O'Reilly 1999;O'Reilly and Lindsay 1999;Shan et al 1999). Parameters have been chosen as in Schlichenmaier et al (2005) and Hantke et al (2005). All calculations are for a two-band structure taking into account the lowest conduction and valence subbands only.…”

Section: Theorymentioning

confidence: 99%

Carrier Dynamics in Quantum Well Lasers

et al. 2006

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A fully microscopic theory is used to perform an analysis of carrier-carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier-carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.

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Time-resolved photoluminescence of type-I and type-II(GaIn)As∕Ga(NAs)heterostructures

Cited by 22 publications

References 24 publications

Substrate and Mg doping effects in GaAs nanowires

Substrate and Mg doping effects in GaAs nanowires

Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

Carrier Dynamics in Quantum Well Lasers

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