Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

Mair, R. A.; Lin, J. Y.; Jiang, H. X.; Jones, E. D.; Allerman, Andrew A.; Kurtz, S. R.

doi:10.1063/1.125698

Cited by 166 publications

(102 citation statements)

References 19 publications

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“…33,36,37 The degradation of PL efficiency at low N concentration in III-V semiconductor materials has been reported by several research groups. 12,42,43 Buyanova et al, for example, 43 observed similar nonradiative recombination channels, with activation energy of 50 meV, in the GaAsN/GaAs system. They suggested that these efficient competing nonradiative channels are located in the GaAsN layer, and that these channels are activated as soon as carriers are thermally detrapping from the localized states.…”

Section: Resultsmentioning

confidence: 80%

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence ͑PL͒ technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity.

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Section: Resultsmentioning

confidence: 80%

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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“…Important applications include lasers with wavelength in the 1.3-1.55 µm range, as well as solar cells with band gap around 1.0 eV [3]. Generally speaking the GaAsN and InGaAsN alloys have displayed evidence of inhomogeneities, such as broad photoluminescence (PL) line widths, variable PL decay times, and short minority carrier diffusion lengths [4][5][6][7]. Such observations are often taken as an indicator of compositional fluctuations in the materials, although direct structural characterization of such fluctuations is lacking.…”

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confidence: 99%

Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

McKay

Feenstra

Schmidtling

et al. 2001

Applied Physics Letters

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The pair distribution function of nitrogen atoms in GaAs0.983N0.017 has been determined by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the cleaved (1 0) surface are imaged. A modest enhancement in the number of nearest-neighbor pairs particularly with [001] orientation is found, although at larger separations the distribution of N pair separations is found to be random.Considerable interest has developed in recent years concerning GaAsN and InGaAsN alloys with low N content, typically a few %. The large predicted band gap bowing in this system of highly mismatched anions leads to the possibility of considerable band gap reduction with modest N content [1,2]. Important applications include lasers with wavelength in the 1.3-1.55 µm range, as well as solar cells with band gap around 1.0 eV [3]. Generally speaking the GaAsN and InGaAsN alloys have displayed evidence of inhomogeneities, such as broad photoluminescence (PL) line widths, variable PL decay times, and short minority carrier diffusion lengths [4][5][6][7]. Such observations are often taken as an indicator of compositional fluctuations in the materials, although direct structural characterization of such fluctuations is lacking.In this work we use cross-sectional scanning tunneling microscopy (STM) to directly probe the arrangement of N atoms in GaAs 0.983 N 0.017 alloys. Nitrogen atoms of two distinct contrast levels are imaged, which we assign to occupation in the first and third surface planes relative to the (1 0) surface. From an accurate determination of the position of about 1000 N atoms in a continuous strip of alloy material, we compute the distribution function of pair separations. The arrangement of N atoms is found to be quite consistent with that expected from random occupation, with the exception that an enhanced occurrence of nearest-neighbor N pairs is found.The GaAsN alloys studied here were grown on GaAs(001) substrates by metal organic vapor phase epitaxy (MOVPE) at temperatures between 530 and 570 C using TMGa, TBAs or AsH3, and tertiarybutylhydrazine (TBHy) under hydrogen carrier gas. Additional details of the growth and characterization of the material can be found in Ref. [8]. The particular film studied here consists of a GaAs buffer layer followed by a GaAs 0.983 N 0.017 layer, a 52 nm thick GaAs spacer layer, a GaAs 0.972 N 0.028 layer, and a 370 nm thick GaAs cap layer. The thickness of the GaAsN layers was determined by high-resolution x-ray diffraction (HRXRD) to be about 18 nm; STM measurements of their thickness gave results of 14-19 nm depending on location in the wafer. The N contents quoted above were also determined by HRXRD; STM measurements for those quantities gave similar results. The GaAs substrate, buffer layer, and cap layer were doped with Si at a con-1 1°P ublished in Appl. Phys. Lett. 78, 82 (2001).

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“…Consequently, the non-radiative transfer dominates on the high-energy side of the PL spectrum, which corresponds to all energies E > E m . The observed radiative transitions are either delocalized or slightly localized excitons, which can be easily transferred out of their sites 26 . Thus, they have extremely short decay times: e.g.…”

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confidence: 99%

“…The PL decay time of localized excitons decreases by a factor of 3.1 in a small energy interval of 14 meV. The energy dependent PL decay of localized excitons can be tted by 26,33 τ…”

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confidence: 99%

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Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

Eßer

Winnerl

Patanè

et al. 2016

Applied Physics Letters

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We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We nd ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are signi cantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with increasing N content, in agreement with the two-level band anticrossing model.

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Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

Cited by 166 publications

References 19 publications

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

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