Time-resolved probe diagnostics of pulsed DC magnetron discharge during deposition of TiO  layers

Straňák, Vítězslav; Hubička, Zdeněk; Adámek, Petr; Blažek, J.; Tichý, M.; Špatenka, Petr; Hippler, R.; Wrehde, S.

doi:10.1016/j.surfcoat.2006.04.013

Cited by 43 publications

(31 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The high power electrical circuit of the dual sputtering system is based on a parallel combination of two identical pulsed power switches as employed in our previous works [15,26,27]. Each of the 2 electric loops employs a power switch in combination with a commercial direct current power supply (AE Pinnacle 3000) with a range down to -1,000 V designed for continuous operation and used to charge a large capacitor during the idle part of the pulses.…”

Section: Methodsmentioning

confidence: 99%

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

Straňák

Drache

Čada

et al. 2011

Contrib. Plasma Phys.

Self Cite

View full text Add to dashboard Cite

Time-resolved measurements have been performed during dual High Power Impulse Magnetron Sputtering (dual-HiPIMS) with two cathodes in a closed magnetic field configuration. The effect of a delay between subsequent pulses on electron density, mean electron energy, and ion flux to the substrate was investigated by time-resolved diagnostic methods. Two different delays of 15 μs and 500 μs between subsequent pulses were investigated. The dual-HiPIMS system, operated at a repetition frequency f = 100 Hz and duty cycle of 1 %, was equipped with different metallic targets (Ti, Cu). It is shown that a delay between subsequent pulses influences the plasma parameters and can be used to control deposition processes. It was noted that target surfaces (alternately serving as a cathode/anode) are contaminated by sputtered material from the previous pulse which influences the time-evolution of the discharge parameters.

show abstract

Section: Methodsmentioning

confidence: 99%

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

Straňák

Drache

Čada

et al. 2011

Contrib. Plasma Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…3. The discharge current was calculated, using Ohm s law formula, from the voltage drop measured by oscilloscope on the ballast resistor (the method is described in detail in our earlier papers [43,45]). Time evolution of I D shown in Fig.…”

Section: Time-resolved Diagnostics Of Plasma Dischargementioning

confidence: 99%

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Straňák¹,

Quaas²,

Bogdanowicz³

et al. 2010

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

To cite this version:Vitezslav Stranak, Marion Quaas, Robert Bogdanowicz, Hartmut Steffen, Harm Wulff, et al.. Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (28) AbstractThe paper is focused on a study of formation of TiO x N y thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O 2 and N 2 . The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating potential and thermally stabilized at room temperature during deposition process. Post-deposition thermal annealing was not employed. The chemical composition from XPS diagnostic reveals formation of TiO x N y structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N elements incorporation into the Ti-O lattice. Decrease of band-gap to values Eg ∼ 1.6 eV in TiOxNy thin film is attributed to formed Ti-N bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar + , Ti + , Ti) is presented together with peak discharge current.

show abstract

“…TiN [7], AlN [8], CrN [9], Cu 3 N [10], TiO x [11], Al 2 O 3 [6], CN x [12], diamondlike-carbon (DLC) layers [13] and LiCoO x [14]. In these applications, usually a metallic or single component hollow cathode was reactively sputtered in a suitable working gas.…”

Section: Introductionmentioning

confidence: 99%

Spatial Distribution of Plasma Parameters in DC‐Energized Hollow Cathode Plasma Jet

Leshkov

Kudrna

Chichina

et al. 2010

Contrib. Plasma Phys.

Self Cite

View full text Add to dashboard Cite

DC energized hollow cathode plasma jet system was examined by radially movable Langmuir probe. Radial distribution of electron concentration, plasma and floating potentials and mean electron energy were obtained from measured probe characteristics at the distance 17 mm downstream of the hollow cathode -nozzle. The radial dependence of plasma parameters was measured for distances from the system axis 0-120 mm in the discharge containing Ar and O2. Two scenarios were used: addition of O2 into the nozzle and into the plasma vessel. The differences in measured floating and plasma potential, electron density and mean electron energy radial courses obtained in the two scenarios are qualitatively explained. In addition temporal dependences of main plasma parameters for discharges in clean argon and argon-oxygen mixture were investigated that demonstrate system stability and its applicability for deposition of layers containing Ti. TiOx thin films were deposited onto glass substrates and examined by AFM and ellipsometry. It is illustrated that the differences in plasma parameters in the two scenarios of oxygen addition influence the layer properties.

show abstract

Time-resolved probe diagnostics of pulsed DC magnetron discharge during deposition of TiO layers

Cited by 43 publications

References 31 publications

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Spatial Distribution of Plasma Parameters in DC‐Energized Hollow Cathode Plasma Jet

Contact Info

Product

Resources

About