Time‐resolved spectroscopy of exciton‐related states in single crystals and single crystalline films of Lu3Al5O12 and Lu3Al5O12:Ce

Babin, V.; Bichevin, V.; Gorbenko, V.; Kink, M.; Makhov, Alexander M.; Maksimov, Yu. P.; Nikl, M.; Stryganyuk, G.; Zazubovich, S.; Zorenko, Yu.

doi:10.1002/pssb.201046486

Cited by 11 publications

(7 citation statements)

References 48 publications

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“…The parameters used to obtain the best fit are reported in the figures. The model described above successfully reproduces the data and the considered RES structure as well as parameters obtained are characteristic for the localized exciton states in aluminum garnets (see, e.g., [12]). Thus, the results of our decay kinetics modelling strongly support the hypothesis on the excitonic origin of both VIS emissions in LuAG:Bi and YAG:Bi made in [6][7].…”

Section: The Low-temperature Luminescence Decay Kinetics and The Quansupporting

confidence: 54%

“…In Fig. 5 we show the excitation spectrum of the UV emission of LuAG:Bi measured at 10 K. As it is evident from the inset, a strong band near 6 eV is really present in the excitation spectrum of the UV emission on the slope of the intense bands arising from the excitons perturbed by Bi 3+ ions [12]. Similar consideration for YAG:Bi, where the A band is located at 4.57 eV, allows the conclusion that the C and B bands should be located at about 5.9 eV and 5.15 eV.…”

Section: The Low-temperature Luminescence Decay Kinetics and The Quanmentioning

confidence: 91%

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Origin of Bi³⁺‐related luminescence centres in Lu₃Al₅O₁₂:Bi and Y₃Al₅O₁₂:Bi single crystalline films and the structure of their relaxed excited states

Babin

Gorbenko

Krasnikov

et al. 2012

Physica Status Solidi (b)

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Single crystalline films (SCFs) of Y 3 Al 5 O 12 :Bi and Lu 3 Al 5 O 12 :Bi with different Bi 3+ contents are studied at 1.7-300 K by the time-resolved luminescence spectroscopy methods under excitation in the 2.4-20 eV energy range. Two ultraviolet emission bands of these SCFs, located at 3.99-4.08 eV at T<80 K and at 4.11-4.19 eV at 150 K, arise from the radiative decay of the metastable and radiative minima, respectively, of the triplet relaxed excited state (RES) of a single Bi 3+ center, which are related to the 3 P 0 and 3 P 1 levels of a free Bi 3+ ion. Their excitation bands located around 4.6 eV, 5.2 eV, and 5.95 eV are assigned to the 1 S 0 → 3 P 1 , 1 S 0 → 3 P 2 , and 1 S 0 → 1 P 1 transitions, respectively, in free Bi 3+ ions. The luminescence of dimer Bi 3+ -Bi 3+ centers is not detected in the SCFs studied. The lower-energy (2.6 eV) visible emission of these SCFs is due to an exciton, localized near a single Bi 3+ ion, while the higherenergy (2.75 eV) visible emission, an exciton, localized near a dimer Bi 3+ -Bi 3+ center. Temperature dependences of the luminescence decay times are measured for the ultraviolet and visible emissions in the 1.7-300 K temperature range and simulated by phenomenological models of the dynamics of corresponding excited states. The quantitative parameters of RESs (the energy separations between the energy levels and the rates of the radiative and nonradiative transitions from these levels) are calculated.

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Section: The Low-temperature Luminescence Decay Kinetics and The Quansupporting

confidence: 54%

Section: The Low-temperature Luminescence Decay Kinetics and The Quanmentioning

confidence: 91%

Origin of Bi³⁺‐related luminescence centres in Lu₃Al₅O₁₂:Bi and Y₃Al₅O₁₂:Bi single crystalline films and the structure of their relaxed excited states

Babin

Gorbenko

Krasnikov

et al. 2012

Physica Status Solidi (b)

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“…The relative intensity of the 5.28 eV emission is much larger under X-ray excitation. By analogy with the ~4.3 eV emission of LuAG [20], we suggest that the 5.28 eV emission arises from recombination processes. The 4.2 eV emission found in [12] has been ascribed to the exciton-based center [15,16,21].…”

Section: Intrinsic Luminescence Of Yap Single Crystalsmentioning

confidence: 68%

“…The origin of the analogous (4.3 eV) emission in LuAG SCF was studied in [20]. By analogy with [20], we suggest that the 4.16 eV emission arises from an exciton localized near a Pt 4+ ion whose presence is caused by the use of a platinum crucible at the SCF preparation. In the excitation spectrum of the 3.63 eV emission of the single Pb 2+ -based centers, the 7.66 eV band is observed (Fig.…”

Section: Self-trapped and Localized Exciton Luminescence In Yap Singlmentioning

confidence: 75%

Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO₃ and YAlO₃ : Ce

Babin¹,

Gorbenko²,

Кондакова³

et al. 2011

J. Phys. D: Appl. Phys.

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Luminescence characteristics of single crystals (SC), single crystalline films (SCF), powders and ceramics of YAlO 3 and YAlO 3 :Ce have been studied at 4.2-300 K under photoexcitation in the 4-20 eV energy range and X-ray excitation. The origin and structure of defects responsible for various exciton-related emission and excitation bands have been identified. The ~5.6 eV emission of YAlO 3 SCF is ascribed to the self-trapped excitons. In YAlO 3 SC, the dominating 5.63 eV and 4.12 eV emissions are ascribed to the excitons localized at the isolated antisite defect Y 3+ Al and at the Y 3+ Al defect associated with the nearest-neighbouring oxygen vacancy, respectively. Thermally stimulated release of electrons, trapped at these defects, takes place at 200 K and 280 K, respectively. The formation energies of various Y 3+ Al-related defects are calculated. The presence of Y Al antisite-related defects is confirmed by NMR measurements. The influence of various intrinsic and impurity defects on the luminescence characteristics of Ce 3+ centers is clarified. The assumption about effective formation of the {Y 3+ Al-V O }-type defects in YAP SC is supported also by the comparison of the Y 3+ Al and {Y 3+ Al-V O } defects formation energies. 3.3. Calculation of the Y 3+ Al , {Y 3+ Al-V O }, and {Y 3+ Al-Ce 3+ } defects formation energies Ab-initio computations allow determination the total energies as a function of ionic coordinates and types of ions, and thus provide independent information about the microscopic structure of a defect and clarify some models of defects. The density functional theory (DFT) calculations were performed by us within the local spin-density approximation (LSDA). We have used the all-electron full-potential local-orbital

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“…In the presence of Ce 3+ ions E exc values ranging from 7.25 to 7.15 eV have been reported for LuAG single crystals, while higher values up to 7.30 eV have been reported for LuAGG semiconducting films in absence of crystallographic defects usually present in a doped crystal. 94 The value of 7.0 eV (see Figure 7 triangle at mx = 5) reported in ref 89 as "optical band gap" of LuAG:1% Pr, at room temperature, is in good agreement with the value of E g reported by Ogieglo et al (7.07 eV) for LuAG:0.1%Pr 3+ , 92 at room temperature, and it is coincident with the E exc value of 7.15 eV, at 8 K, reported in ref 67 for LuAG:0.2 atom %Ce 3+ , after correction for the difference of temperature according to eq 10a. According to this, and in agreement with other authors, 8−11 we will assume the values of E gopt reported by Katelnikovas et al as very good proxies of the room temperature E exc values of LuAGG:1%Pr 3+ crystalline samples.…”

Section: (Luagg) Garnet Phasesmentioning

confidence: 99%

Band Gap Modeling of Different Ternary and Quaternary Alumina Garnet Phases Y₃(Al_xGa_1–x)₅O₁₂ (YAGG) and Lu₃(Al_xGa_1–x)₅O₁₂ (LuAGG). A Semiempirical Approach

et al. 2022

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A further generalization to quaternary oxide systems of the modeling equation of optical band gap values, based on the semiempirical correlation between the differences in the electronegativity of oxygen and the average cationic electronegativity, proposed some years ago, has been carried out by expanding the approach recently employed for ternary mixed oxides. The choice of oxide polymorphs and their influence on the fitting procedure of an experimental data set is evidenced by a detailed discussion of the fitting process of the literature's experimental band gap data pertaining two quaternary oxide systems of the garnet family, namely, Y 3 (Al x Ga 1−x ) 5 O 12 (YAGG) and Lu 3 (Al x Ga 1−x ) 5 O 12 (LuAGG), playing an important role in several engineering applications. The two investigated systems, moreover, span a quite large range of band gap energy values (from ∼5.5 to ∼7.5 eV), as a function of the Al/Ga ratio, allowing a rigorous test of the proposed modeling equation. Based on the wide existing literature on the presence of excitonic effects in the investigated systems some empirical correlations between an optical gap and a band gap in the presence of excitonic effects are suggested, too, which could provide some rationale to overcome the discrepancies frequently encountered in comparing band gap values reported in the literature for the same materials. The results of this work confirm the ability of this semiempirical approach in providing good agreement between experimental and theoretical band gap values also for very complex systems, where more sophisticated density functional theory-based methods face some difficulties in predicting the correct values.

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Time‐resolved spectroscopy of exciton‐related states in single crystals and single crystalline films of Lu₃Al₅O₁₂ and Lu₃Al₅O₁₂:Ce

Cited by 11 publications

References 48 publications

Origin of Bi³⁺‐related luminescence centres in Lu₃Al₅O₁₂:Bi and Y₃Al₅O₁₂:Bi single crystalline films and the structure of their relaxed excited states

Origin of Bi³⁺‐related luminescence centres in Lu₃Al₅O₁₂:Bi and Y₃Al₅O₁₂:Bi single crystalline films and the structure of their relaxed excited states

Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO₃ and YAlO₃ : Ce

Band Gap Modeling of Different Ternary and Quaternary Alumina Garnet Phases Y₃(Al_xGa_1–x)₅O₁₂ (YAGG) and Lu₃(Al_xGa_1–x)₅O₁₂ (LuAGG). A Semiempirical Approach

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Time‐resolved spectroscopy of exciton‐related states in single crystals and single crystalline films of Lu3Al5O12 and Lu3Al5O12:Ce

Cited by 11 publications

References 48 publications

Origin of Bi3+‐related luminescence centres in Lu3Al5O12:Bi and Y3Al5O12:Bi single crystalline films and the structure of their relaxed excited states

Origin of Bi3+‐related luminescence centres in Lu3Al5O12:Bi and Y3Al5O12:Bi single crystalline films and the structure of their relaxed excited states

Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO3 and YAlO3 : Ce

Band Gap Modeling of Different Ternary and Quaternary Alumina Garnet Phases Y3(AlxGa1–x)5O12 (YAGG) and Lu3(AlxGa1–x)5O12 (LuAGG). A Semiempirical Approach

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Time‐resolved spectroscopy of exciton‐related states in single crystals and single crystalline films of Lu₃Al₅O₁₂ and Lu₃Al₅O₁₂:Ce

Origin of Bi³⁺‐related luminescence centres in Lu₃Al₅O₁₂:Bi and Y₃Al₅O₁₂:Bi single crystalline films and the structure of their relaxed excited states

Origin of Bi³⁺‐related luminescence centres in Lu₃Al₅O₁₂:Bi and Y₃Al₅O₁₂:Bi single crystalline films and the structure of their relaxed excited states

Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO₃ and YAlO₃ : Ce

Band Gap Modeling of Different Ternary and Quaternary Alumina Garnet Phases Y₃(Al_xGa_1–x)₅O₁₂ (YAGG) and Lu₃(Al_xGa_1–x)₅O₁₂ (LuAGG). A Semiempirical Approach