We report single-shot measurements of resistance versus time for thermally assisted spintorque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching, including the variations between individual switching events. Analyses of pre-switching thermal fluctuations allow detailed measurements of coherence times and variations in magnetization precession amplitude. We find that with a small in-plane hard-axis magnetic field the magnetization dynamics are more spatially coherent than for the case of zero field.
Page 2 of 13Magnetization switching induced by spin transfer torque [1,2] is of interest both for probing the fundamental physics of magnetic dynamics and for applications in storage technologies [3,4]. Measurements in the time domain [5][6][7][8][9][10][11] can provide the most direct information about spin-torque-driven magnetic dynamics. However, most previous timeresolved studies [5][6][7][8][9] employed stroboscopic approaches, which average over many events so that they reveal only average behavior and hide individual variations. Magnetic tunnel junctions (MTJs) can now provide sufficiently large resistance signals (relative to metal spin valves [5][6][7][8]) for single-shot measurements. Two initial experiments have measured distributions of spin-torque switching times in MTJs using single-shot techniques [10,11] but they did not resolve the dynamics leading to switching. Here we report single-shot measurements of spin-torque switching in MTJs with sufficiently improved sensitivity to study the pre-switching resistance signals in detail. We observe the variations between switching processes caused by thermal fluctuations and can perform comprehensive analyses of the fluctuations prior to switching. We find that switching is more spatially coherent when the magnetic moments of the electrodes are initially offset (at an angle different than 0º or 180º) than when the moments are collinear.The MTJ samples that we study have the layer structure (in nm): bottom contact . Our discussion of currentdriven reversal will focus on switching from the anti-parallel (AP) state to parallel (P) state because this required approximately 30% lower voltages than P-to-AP switching.Page 3 of 13However, measurements of P-to-AP dynamics are qualitatively similar. We will examine switching both in the case of zero total field on the free layer (in which an applied field cancels H d ) and the case that a small (100 Oe) field is applied along the in-plane hard axis, to rotate the free-layer magnetization approximately 15º from the strictly AP configuration (see inset, Fig. 1(a)). We will present data from a single sample, but have studied two other devices in zero field and one other in the hard-axis field, with all showing the same differences depending on field geometry.We perform single-shot measurements using the circuit shown in Fig. 1(b). After initializing the sample in the AP state we use a pulse generator to produce an 100 ns long, 300 ps ri...