2012
DOI: 10.1117/1.jmm.11.2.021109
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Tin laser-produced plasma as the light source for extreme ultraviolet lithography high-volume manufacturing: history, ideal plasma, present status, and prospects

Abstract: Abstract. Today intermediate-focus equivalent extreme ultraviolet (EUV) power of several watts is now available, and EUV lithography scanners are being considered as potential scanners for high-volume manufacturing (HVM) tools. However, for high-volume manufacturing with throughput of over 100 wafers per hour, EUV power of 350 W may be required. We review the history of EUV sources for lithography with tin as fuel. We discuss the ideal plasma for tin sources for extreme ultraviolet lithography (EUVL), conditio… Show more

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Cited by 34 publications
(22 citation statements)
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“…The concept of spectral efficiency, η spec , was proposed by Tomie,4 which is defined as a ratio of the radiation energy in a specified spectral range to the whole radiation energy. Although the plasma generated by the glass laser gave the narrowest 6.8 nm peak, many other lines are emitted in a wide wavelength region, so the spectral efficiency into the region of 0.1 nm width at 6.8 nm is not high at all.…”
Section: Discussionmentioning
confidence: 99%
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“…The concept of spectral efficiency, η spec , was proposed by Tomie,4 which is defined as a ratio of the radiation energy in a specified spectral range to the whole radiation energy. Although the plasma generated by the glass laser gave the narrowest 6.8 nm peak, many other lines are emitted in a wide wavelength region, so the spectral efficiency into the region of 0.1 nm width at 6.8 nm is not high at all.…”
Section: Discussionmentioning
confidence: 99%
“…In the case of Mo/Si multilayer mirror, the bandwidth is about 2 %, and tin (Sn) with an atomic number of 50 is selected as the emitter of LPP. 4 At shorter wavelengths, La/B 4 C multilayer was reported to have a reflectivity of 58.7 % at 6.7 nm with the bandwidth as narrow as 0.6 %. 8 The peak wavelength of reflection can be changed slightly by changing spacing of multilayers but the bandwidth cannot be increased when a high reflectivity is required.…”
Section: -2mentioning
confidence: 99%
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“…[17] Today's information society is realized by the great progress of semiconductor technologies which was achieved by the increase of the integration by reducing the size of semiconductor circuits. This was enabled by the progress of lithography technology which prints in reduced size the circuit pattern.…”
Section: Fig 1 Eups Unit 2 That Is Available For Sample Analysis Anmentioning
confidence: 99%
“…The EUV power is required to be more than 100 W at the intermediate focus and the etendue is required to be less than 3 mm 2 str [1]. The two main competing technologies for the production of EUV radiation are the Discharge Produced Plasma (DPP) [2] and the Laser Produced Plasma (LPP) [3]. Most LPP sources use tin because it is a more efficient EUV radiator compared to Xenon.…”
Section: Introductionmentioning
confidence: 99%