TiO[sub 2]∕Al[sub 2]O[sub 3]∕TiO[sub 2] Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition

Jeon, Woojin; Chung, Hyung-Jin; Joo, Dae-Kwon; Kang, Shin-Gak

doi:10.1149/1.2813881

Cited by 47 publications

(22 citation statements)

References 9 publications

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“…The data illustrated in color in one of the figures, is shown in black in all the other figures. The data was retrieved from the following references: Ti(O i Pr)4/H2O [37,359,364,366,368,379,381,382,384,385,387,[391][392][393]396,398,400,402,404], Ti(O i Pr)4/H2O2 [540], Ti(O i Pr)4/O3 [547,551], Ti(O i Pr)4/O2 plasma [384,397,567,[569][570][571]573,574,578], Ti(O i Pr)4/H2O plasma [384,397], Ti(O i Pr)4/N2O plasma [576], Ti(O i Pr)4/HCOOH [598], Ti(O i Pr)4/CH3OOH [598], Ti(OEt)4/H2O [37,63,607,615], Ti(OEt)4/H2O2 [54,63,91], Ti(OMe)4/H2O2 [614,618,622,627], Ti(OMe)4/O3 …”

Section: Alkoxidesmentioning

confidence: 99%

Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

145

116

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Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cov er the lat est tr ends in t he research f ield, both the var iously constr ucted TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

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Section: Alkoxidesmentioning

confidence: 99%

Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

145

116

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“…The PEALD-derived TiO x films showed an anatase structure, which had a high relative dielectric constant ͑k͒ of approximately 40. 15 The transfer and output characteristics of the a-IGZO TFTs were evaluated by means of a B-1500 ͑Agilent͒ probe system. Figures 2͑a͒ and 2͑b͒ show the representative transfer characteristics ͑W / L =40/ 10 m͒ of the a-InGaZnO transistors with the SiN x ͑200 nm͒ only and TiO x ͑8 nm͒ / SiN x ͑200 nm͒ gate dielectrics, respectively.…”

Section: Impact Of High-k Tio X Dielectric On Device Performance Of Imentioning

confidence: 99%

Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors

Park

Jeong

et al. 2009

Applied Physics Letters

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We investigated the effect of the high-k TiOx (k∼40) gate dielectric on the mobility (μFE) of indium-gallium-zinc oxide (IGZO) transistors. As the thickness of the TiOx layer at the interface of the IGZO channel and SiNx gate dielectric layer increased from 2 to 8 nm, the μFE value was monotonously reduced from 9.9 to 1.8 cm2/V s. The degradation of the mobility was attributed to the Coulomb scattering mechanism rather than the phonon scattering mechanism of the high-k TiOx layer based on the behavior of the temperature-dependent mobilities for all of the IGZO transistors.

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“…1,2 TiO 2 films have been widely investigated as high-dielectric-constant materials for sub-50 nm technology DRAM capacitors because the dielectric constant of TiO 2 is the highest of all the single metal oxides. [3][4][5] TiO 2 has three different polymorphic forms: rutile, anatase, and brookite. The dielectric constants of rutile TiO 2 are 90 and 170 along the a-and c-axes, respectively, which are much larger than the values of 30-40 for anatase.…”

mentioning

confidence: 99%

Enhancement of the TiO[sub 2] Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate

Joo

Park

Kang

2009

Electrochem. Solid-State Lett.

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TiO 2 films were deposited via plasma-enhanced atomic layer deposition on an Ir electrode. The phase of the TiO 2 films on the Ir electrode were changed from anatase to anatase and rutile multiphases with oxygen plasma time due to oxidation of Ir surface to IrO 2 , resulting in the increase of dielectric constant ͑from 50 to 83͒. In order to improve the rutile crystallinity, IrO 2 seed layer was formed by annealing at 600°C for 10 min in ambient oxygen before TiO 2 films deposition. As a result, the rutile crystallinity of TiO 2 films was enhanced and its dielectric constant increased to 90.Oxide thin films with higher dielectric constants than those of typical SiO 2 or silicon oxide/nitride are receiving more attention for use as capacitor dielectrics as the size of dynamic random access memory ͑DRAM͒ decreases. 1,2 TiO 2 films have been widely investigated as high-dielectric-constant materials for sub-50 nm technology DRAM capacitors because the dielectric constant of TiO 2 is the highest of all the single metal oxides. 3-5 TiO 2 has three different polymorphic forms: rutile, anatase, and brookite. The dielectric constants of rutile TiO 2 are 90 and 170 along the a-and c-axes, respectively, which are much larger than the values of 30-40 for anatase. 3 It has been reported that TiO 2 films deposited by sputtering, metallorganic chemical vapor deposition, and atomic layer deposition ͑ALD͒ have an amorphous or anatase structure. 6-8 Amorphous or anatase TiO 2 films can be transformed into rutile phase films by annealing at temperatures of Ͼ700°C. 9 Therefore, they are not suitable for use in metal-insulator-metal ͑MIM͒ DRAM capacitors because electrodes made of Ru and Ir are degraded by such high temperatures. 5,10,11 The growth of rutile TiO 2 films on a Ru electrode at 250°C by ALD was recently reported, and its success was due to rutile TiO 2 and RuO 2 having the same crystal structure and similar lattice parameters. 3 MIM capacitors have been used for DRAM because of the difficulties in achieving the equivalent oxide thickness with conventional poly-Si electrodes. 12,13 TiN was used as a metal electrode in 80 nm technology. 14 However, new metal electrode materials will be required for technology below the 45 nm level to eliminate the low-k interfacial oxide layer between the high-k and the metal electrode. Iridium ͑Ir͒ is one candidate for the bottom electrode material because it forms a conductive oxide and has a low resistivity and high work function. 15 In particular, Ir electrodes offer potential for the growth of rutile TiO 2 films due to their own rutile-structured oxide. Even so, there have been few studies on the use of Ir bottom electrodes for DRAM capacitors. 16,17 In this paper, we evaluate the effect of an Ir bottom electrode on the crystallinity and dielectric constant of TiO 2 films deposited via plasma-enhanced ALD ͑PEALD͒, and report on the improved dielectric properties of TiO 2 films with IrO 2 as a seed layer.TiO 2 films were deposited on an Ir electrode at a deposition temperature of 250°C...

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TiO[sub 2]∕Al[sub 2]O[sub 3]∕TiO[sub 2] Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition

Cited by 47 publications

References 9 publications

Titanium dioxide thin films by atomic layer deposition: a review

Titanium dioxide thin films by atomic layer deposition: a review

Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors

Enhancement of the TiO[sub 2] Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate

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