TiO₂DLAR coatings for planar silicon solar cells

Abstract

In this paper we demonstrate that a double‐layer anti‐reflection (DLAR) coating can be fabricated using only titanium dioxide (TiO2). Two TiO2 thin films were deposited onto planar silicon wafers using a simple atmospheric pressure chemical vapour deposition (APCVD) system under different deposition conditions. Weighted average reflectances of 6.5% (measured) and 7.0% (calculated) were achieved for TiO2 DLAR coatings in air and under glass, respectively. An increase in the short‐circuit current density of Δ Jsc = 2.5 mA/cm2 can be expected for an optimised TiO2 DLAR coating when compared with a commercial TiO2 single‐layer anti‐reflection coating. Copyright © 2003 John Wiley & Sons, Ltd.

Dielectric films for Si solar cell applications

“…[15][16][17][18][19] These layers are deposited on a thin, typically 200 Å oxide layer, which provides adequate interface passivation. SiO 2 for surface passivation is grown by high-temperature dry oxidation, typically at about 1,000°C in a conventional thermal furnace, followed by a forming gas anneal.…”

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