Tip characterization for CD-AFM: getting to 2 nm, 3 sigma

Miller, Kirk; Chand, Ami; Dahlen, Greg; Todd, Bradley

doi:10.1117/12.473412

Cited by 7 publications

(5 citation statements)

References 5 publications

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“…So far a number of nanopositioner calibration reference materials (RMs), creep and hysteresis compensation techniques and scanner calibration algorithms have been developed [16,[21][22][23][24][25]. Similarly, significant progress has been achieved in developing tip characterization techniques and tip calibration artifacts [26][27][28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Advances in the atomic force microscopy for critical dimension metrology

Hussain

Ahmad

Song

2016

Meas. Sci. Technol.

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Downscaling, miniaturization and 3D staking of the micro/nano devices are burgeoning phenomena in the semiconductor industry which have posed sophisticated challenges in the critical dimension (CD) metrology. Over the past few years, atomic force microscopy (AFM) has emerged as an important CD metrology technique in meeting these challenges because of its high accuracy, 3D imaging capability, high spatial resolution and non-destructive nature. In this article, advances in the AFM based critical dimension (CD) metrology are systematically reviewed and discussed. CD metrology AFM techniques, strengths, limitations and scanning algorithms are described. Developments towards accurate measurements such as creep and hysteresis compensation of the piezoelectric scanners, their calibration and tip characterization are discussed. In addition, image reconstruction and measures for achieving high accuracy CD measurements with hybrid metrology technique are also discussed. CD metrology challenges offered by the next generation lithography (NGL) techniques such as those associated with the 3D nanodevices of 10 nm node and beyond have been highlighted.

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Section: Introductionmentioning

confidence: 99%

Advances in the atomic force microscopy for critical dimension metrology

Hussain

Ahmad

Song

2016

Meas. Sci. Technol.

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“…On the other hand, the measurements in horizontal dimension involving bottom CD and the shape of sidewall depend on the shape of tips [5], and on the measurement techniques employed. In addition, although some conventional CD-AFMs [6][7] [8] are equipped with flared tips for photomask application, the technique has not been successful in measuring undercuts with overhangs larger than that of flared tip, or for measuring micro edge roughness of several nanometer sizes.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional metrology with side-wall measurement using tilt-scanning operation in digital probing AFM

et al. 2006

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We have developed a new measurement techniques employing digital probing with AFM (Atomic Force Microscope) that can examine sidewalls of fine patterns. This new technique employs digital probing operations, such sample-tilt step-in operation, tilt-step-in operation with a sharpened tilted tip, and multi-angle step-in operation with a flared tip. Firstly, we examined the validity of digital probing operation using a carbon nanotube (CNT) tip, showing the measurement repeatability of approximately 1 nm (3σ) on a fine trench pattern with 50 nm width and 300 nm depth. After the slip calculation between the tilted-tip and the sidewall for the new sidewall measurement technique, we measured a perpendicular reference sidewall with two types of operations, namely, tilt-step-in and multi-angle step-in operations. We then obtained 3D images of ArF resist patterns that involved measurement of sidewall surface roughness. Finally, we demonstrated a possibility of extending the technique for measuring denser trench patterns by using sample-tilt method and a tilted CNT tip.

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“…In order to reach both sides of the sidewall, conventional CD-AFMs 5) with flared tips have been employed in mask metrology by using them in tapping and non-contact modes. [6][7][8] Since these operations are dynamic in nature, and are needed to oscillate the cantilever and the tip horizontally, the amplitude of the oscillation causes limitations in the fine of pattern width measurements.…”

Section: Introductionmentioning

confidence: 99%

Critical-Dimension Measurement using Multi-Angle-Scanning Method in Atomic Force Microscope

Murayama

Gonda

Koyanagi

et al. 2006

Jpn. J. Appl. Phys.

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We have developed a new critical dimension (CD) measurement technique using atomic force microscope (AFM) which can measure width-dimensions and examine sidewall-shapes of fine patterns on a wafer. The technique employs a flared-type tip in combination with digital probing and multi-angle scanning mechanism that allows the tip to trace the sidewalls on both sides of a feature (or trench) by making physical contacts with the sidewall surface. First, by using finite element method (FEM) we analyzed deformation of the tip and cantilever to compensate errors caused by the deformation. To verify our compensation method we measured quartz reference patterns either with perpendicular sidewalls or undercuts. In this paper we will describe the applications and usefulness of this multi-angle operation and show some measurement results of ArF resist patterns with 200 nm width and 400 nm depth that were obtained with a flared tip of 120 nm diameter.

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Tip characterization for CD-AFM: getting to 2 nm, 3 sigma

Cited by 7 publications

References 5 publications

Advances in the atomic force microscopy for critical dimension metrology

Advances in the atomic force microscopy for critical dimension metrology

Three-dimensional metrology with side-wall measurement using tilt-scanning operation in digital probing AFM

Critical-Dimension Measurement using Multi-Angle-Scanning Method in Atomic Force Microscope

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