Titanium silicidation by halogen lamp annealing

Okamoto, Tatsuo; Tsukamoto, K.; Shimizu, Masahiro; Matsukawa, T.

doi:10.1063/1.335265

Cited by 38 publications

(11 citation statements)

References 11 publications

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“…The peak height ratio and shapes of the Ti L 3 M 2 , 3 M 2 , 3 and L 3 M 2 , 3 M4, 5 Auger transitions permit distinction between elemental, oxidized and silicided titanium.…”

Section: Resultsmentioning

confidence: 98%

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Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen

1985

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Sputter deposited Ti films on Si and Si02 substrates have been rapid thermal annealed in N 2 at temperatures of 400-1100'C, and the reaction followed using AES, TEM, electron diffraction and sheet resistance measurements.The Ti initially becomes contaminated with oxygen before being nitrided at the surface and silicided at the interface. The oxygen is expelled from the siuicide and a TiNxO _x/TiSix bilayer eventually results.With Si substrates, TiNxO1_x is much the thinner layer whereas the reverse is true on 5i0 2 . Extended annealing in N 2 completely converts the TiSi 2 layer on Si into TiN.

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“…The peak height ratio and shapes of the Ti L 3 M 2 , 3 M 2 , 3 and L 3 M 2 , 3 M4, 5 Auger transitions permit distinction between elemental, oxidized and silicided titanium.…”

Section: Resultsmentioning

confidence: 98%

“…Rapid thermal annealing (RTA) was introduced [5] to prevent oxidation of Ti during the initial silicidation anneal which would prevent its removal by the selective etch.…”

Section: Introductionmentioning

confidence: 99%

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Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen

1985

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“…To reduce this parameter to values lower than is possible by high dose implantation and anneal, refractory metal silicidation and resulting self-aligned source/drain silicides ͑salicides͒ and polysilicon silicides ͑polycide͒ have been implemented. [1][2][3][4][5][6][7][8][9][10][11][12][13] In a typical titanium silicide process, both the active diffused layers and the gate material are converted to TiSi 2 in a two-step anneal process. After a wet clean and Ti deposition, a 550-700°C anneal is performed to convert Ti and Si to an intermediate C49 phase TiSi 2 , followed by a selective etch of hydrogen peroxide and ammonium hydroxide.…”

Section: Introductionmentioning

confidence: 99%

Stable titanium silicide formation on field oxide after BF2 ion implantation

Mollat

Demkov

Fejes

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Metal silicides synthesized by high current metal-ion implantationThe use of titanium silicide for low resistivity interconnects in a complementary metal-oxidesemiconductor process is investigated. After a source-drain processing, a wet oxide strip, and a 600 Å Ti deposition, a two-step anneal forms stable TiSi 2 in the diffused regions and amorphous silicon gate. Extraneous regions or islands of TiSi 2 were found to form on BF 2 implanted thick field oxide, and were not present on 11 B, n-type ͑Nϩ͒, or nonimplanted field areas. The growth and nucleation of TiSi in the presence of oxygen is discussed, and an oxygen solubility model is used to explain the nucleation of TiSi 2 from a Ti 5 Si 3 interlayer. Two models are presented to explain the availability of Si to form stable TiSi in field oxide regions. In the first, B is shown to promote the formation of oxygen vacancies resulting in a Si rich oxide, while the second involves oxide network strain from the incorporation of F in the oxide, facilitating Si segregation to the surface and subsequent availability of Si atoms.

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“…Besides the influence of dopants themselves on the silicide formation, the influence of impurities like oxygen and carbon has been investigated (17)(18)(19)(20)(21)(22). This problem can however be minimized by means of rapid thermal processing (12,23,24). This problem can however be minimized by means of rapid thermal processing (12,23,24).…”

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confidence: 99%

Titanium Silicide Formation and Arsenic Dopant Behavior under Rapid Thermal Treatments in Vacuum

Furlan

Swart

1989

J. Electrochem. Soc.

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Titanium thin films were deposited by RF sputtering on lightly and heavily arsenic-implanted silicon wafers. These wafers were treated by means of a rapid thermal graphite heater in vacuum for different times and temperatures. The silicide formation and the arsenic behavior, in the substrate, are studied by means of XRD, AES, RBS, and four-point probe measurements. At the initial stage a high concentration of oxygen and carbon is incorporated in the film and a titanium rich silicide is formed. For longer times and intermediate temperatures (550~176 a three-layer film is formed: TiSi2-C49/ TiSi~ (x -1)/TiOx. By increasing temperature, in the same range, the TiSi2-C49 layer grows thicker, and its formation results in the repulsion of oxygen and carbon. Meanwhile, the titanium-rich silicide vanishes. At higher temperature (800~ the TiSi2-C54 phase is obtained promptly after the initial stage. Arsenic presents an inhibition effect on silicide formation at the intermediate temperature range and seems to ease the transformation from TiSi2-C49 to TiSi2-C54 phase. An arsenic snowplow effect is observed for short treatments at 800~ and an increasing arsenic loss is observed with increasing time and temperature. A higher final arsenic concentration in the substrate is observed for TiSi2-C54 formed by a two-step treatment, as in the Salicide process, compared with a single treatment at high temperature (800~ ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.120.3 Downloaded on 2015-06-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.120.3 Downloaded on 2015-06-17 to IP

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Titanium silicidation by halogen lamp annealing

Cited by 38 publications

References 11 publications

Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen

Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen

Stable titanium silicide formation on field oxide after BF2 ion implantation

Titanium Silicide Formation and Arsenic Dopant Behavior under Rapid Thermal Treatments in Vacuum

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