Tm doping of III–V semiconductors by MOVPE

Weber, J.; Scholz, F.; Ottenwälder, D.; Pressel, K.; Hiller, C.; Dörnen, A.; Cordeddu, F.

doi:10.1016/0022-0248(92)90502-a

Journal of Crystal Growth

1992

DOI: 10.1016/0022-0248(92)90502-a

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Tm doping of III–V semiconductors by MOVPE

J. Weber

F. Scholz

D. Ottenwälder

et al.

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Cited by 6 publications

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“…Light emission in III-V semiconductors ͑GaAs, GaInP, GaP, InP, and AlGaAs͒ incorporating Tm 3+ has been previously reported. [3][4][5][6][7][8][9] Photoluminescence ͑PL͒ spectroscopy at low temperatures was the main technique utilized to optically characterize these materials. Luminescence was observed around 0.8, 1.2, and 1.9 m and attributed to transitions between the lowest Tm 3+ crystal-field-split spin-orbit levels ͑ 3 F 4 , 3 H 5 , and 3 H 4 ͒ and the ground state ͑ 3 H 6 ͒, respectively.…”

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Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Lourenço

Gwilliam

Homewood

2008

Applied Physics Letters

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Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2–1.35μm range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm3+ state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained by codoping of boron to reduce the thermal quenching. Seven sharp lines are observed, corresponding to known internal Tm3+ transitions in the manifold from the H53 to the H63 ground states. This center, together with the basic 1.15μm silicon emitters and Si:Er devices operating at 1.54μm, now enables significant coverage of the extended (1.1–1.8μm) optical communications band in silicon.

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Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Lourenço

Gwilliam

Homewood

2008

Applied Physics Letters

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Evidence of an off-center position of thulium in GaAs and excitonic excitation of the Tm3+ emission

Dörnen

Haase

Hiller

et al. 1993

Journal of Applied Physics

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By photoluminescence and by Zeeman spectroscopy we study the characteristic 4f luminescence transition 3H5 → 3H6 at 1.0 eV of thulium in gallium arsenide which has been reported recently. It turns out that optically active Tm3+, which is present in mainly one specific type of center, does not occupy a simple substitutional lattice site. The results show a considerable tetragonal crystal field. The excitation mechanism of the 1.0-eV luminescence is investigated by photoluminescence excitation. The 3H5 → 3H6 is pumped most efficiently by trapping of free excitons.

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Organolanthanides in Materials Science

Gun’ko

Edelmann

1997

Comments on Inorganic Chemistry

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Tm doping of III–V semiconductors by MOVPE

Cited by 6 publications

References 19 publications

Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Evidence of an off-center position of thulium in GaAs and excitonic excitation of the Tm3+ emission

Organolanthanides in Materials Science

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