TMD FinFET with 4 nm thin body and back gate control for future low power technology

Chen, Min–Cheng; Li, Kai-Shin; Li, Lain‐Jong; Lu, Ang‐Yu; Li, Mingyang; Chang, Yung‐Huang; Lin, Chun-Hsiung; Chen, Yi–Ju; Hou, Yun–Fang; Chen, Chun‐Chi; Wu, Bi; Wu, Chonggang; Yang, Inchul; Lee, Yao-Jen; Shieh, Jia‐Min; Yeh, Wen–Kuan; Shih, J.R.; Su, Ping; Sachid, Angada B.; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming

doi:10.1109/iedm.2015.7409813

Cited by 34 publications

(26 citation statements)

References 4 publications

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“…4c we plot the iterative progresses of FinFETs as a function of time line. It is seen that, strikingly, the W fin has been levelling off since 2 decades 4,6,10,11,18,[22][23][24][25][26][27][28] . Our present work brings this nanostructure to a limit of 0.6 nm ML, an order of magnitude thinner than the W fin of state-of-the-art FinFETs.…”

Section: Discussionmentioning

confidence: 99%

A FinFET with one atomic layer channel

et al. 2020

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Since its invention in the 1960s, one of the most significant evolutions of metal-oxidesemiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W fin ) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W fin seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching $10 7 . Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.

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Section: Discussionmentioning

confidence: 99%

A FinFET with one atomic layer channel

et al. 2020

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“…The exposed edges with high chemical active and may play an important role in many catalytic reactions, such as hydrogen production 11 12 13 14 15 , photocatalysis 16 , hydrogen evolution reaction(HER), hydrodesulfurization catalyst used for removing sulfur compounds from oil 17 18 19 20 21 22 23 . In addition, these vertical structures of TMD are ideal channel materials for FinFET 24 . However, edges are usually the rare surface sites of layered materials due to their inherently high surface energy.…”

mentioning

confidence: 99%

Synthesis of Vertically Standing MoS2 Triangles on SiC

Lan

Lai

et al. 2016

Sci Rep

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Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions. We have confirmed the catalytic property in a hydrogen evolution reaction(HER). The Tafel slope is about 54mV/decade.

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“…[19][20][21]25,26 As a result, they can maintain a high carrier mobility even with an atomically-thin layer thickness, which can even outperform that of SOI (silicon-on-insulator) and makes them competitive as channel materials for the next generation transistors. [27][28][29] Besides, these layered two-dimensional semiconductors can be grown on and easily transferred to various substrates. 21,23,30,31 All these properties have lent the layered twodimensional semiconductors a special advantage as a suitable candidate for the implementation of the semiconducting gate.…”

Section: Over-voltage Issue Of Conventional Mg-hemtmentioning

confidence: 99%

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

et al. 2019

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Various 2D/3D heterostructures can be created by harnessing the advantages of both the layered two-dimensional semiconductors and bulk materials. A semiconducting gate field-effect transistor (SG-FET) structure based on 2D/3D heterostructures is proposed here. The SG-FET is demonstrated on an AlGaN/GaN high-electron mobility transistor (HEMT) by adopting single-layer MoS 2 as the gate electrode. The MoS 2 semiconducting gate can effectively turn on and turn off the HEMT without sacrificing the subthreshold swing and breakdown voltage. Most importantly, the proposed semiconducting gate can deliver inherent over-voltage protection for field-effect transistors (FETs). Furthermore, the self-adjustable semiconducting gate potential with drain bias can even boost the ON-current while guaranteeing the safe operation of FET. In implementing the semiconducting gate, the layered two-dimensional materials such as the adopted MoS 2 have several important benefits such as the feasibility of high-quality crystals on different gate dielectrics and the good controllability of semiconducting gate depletion threshold voltage by the layer thickness. The demonstrated semiconducting gate as over-voltage protection for HEMT can be extended to other FETs, which can become another advantageous arena for the possible applications of the layered two-dimensional materials.

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TMD FinFET with 4 nm thin body and back gate control for future low power technology

Cited by 34 publications

References 4 publications

A FinFET with one atomic layer channel

A FinFET with one atomic layer channel

Synthesis of Vertically Standing MoS2 Triangles on SiC

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

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