ToF Atom-probe mass spectra of GaAs

Tsong, Tien T.; Ng, Yee S.; Melmed, A.J.

doi:10.1016/0039-6028(78)90175-9

Cited by 30 publications

(1 citation statement)

References 12 publications

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“…The collected APT data were reconstructed and analyzed using the IVAS 3.6.8 software. The default value of the image compression factor was set as 3.3, and the evaporation field of Zr was 28 V/nm [20] for the APT data reconstruction.…”

Section: Methodsmentioning

confidence: 99%

Atom Probe Tomography Study of Fe Segregation at Phase Interface in Zr–2.5Nb Alloy

Huang

et al. 2019

Acta Metall. Sin. (Engl. Lett.)

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β-Nb is a typical second phase in Zr-Nb-based alloys used as fuel claddings in water-cooled nuclear reactors. The segregation of alloying element Fe may affect the corrosion resistance of Zr-Nb-based alloys. In this work, the Fe segregation at the interface between β-Nb phase and α-Zr matrix in Zr-2.5Nb alloy was studied using atom probe tomography and focused ion beam. The results suggested that the Fe concentration was much lower than Nb concentration in α-Zr matrix, while Fe selectively segregated at the β-Nb/α-Zr phase interface, leading to a Fe concentration peak at some interfaces. The peak Fe concentration varied from 0.4 to 1.2 at.% and appeared at the position where Zr concentration was approximately equal to Nb concentration. The selective segregation of Fe should be affected by the heat treatment and structure defects induced by cold rolling.

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Section: Methodsmentioning

confidence: 99%

Atom Probe Tomography Study of Fe Segregation at Phase Interface in Zr–2.5Nb Alloy

Huang

et al. 2019

Acta Metall. Sin. (Engl. Lett.)

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Atom Probe Tomography on Semiconductor Devices

Khan

Ringer

Zheng

2016

Adv Materials Inter

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In this paper, state‐of‐the‐art Atom Probe Tomography (APT) on industrial semiconductor products is reviewed to explore their device physics and to develop an understanding of atomic‐scale interfaces in them. Different semiconductor devices, such as Light Emitting Diodes (LEDs), High‐Electron‐Mobility Transistors (HEMTs), Field‐Effect Transistors (FETs), Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs), Static or Dynamic Random Access Memory (SRAM or DRAM) and solar cells, have been reviewed in light of their surface morphologies, chemical compositions, dopant distributions, grain boundaries and interface characteristics. The APT approach allows for the further optimization of device techniques, which are suggested for better performance.

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Field-Ion Microscopy in Materials Science

Wagner

1982

Crystals

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ToF Atom-probe mass spectra of GaAs

Cited by 30 publications

References 12 publications

Atom Probe Tomography Study of Fe Segregation at Phase Interface in Zr–2.5Nb Alloy

Atom Probe Tomography Study of Fe Segregation at Phase Interface in Zr–2.5Nb Alloy

Atom Probe Tomography on Semiconductor Devices

Field-Ion Microscopy in Materials Science

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