In this experiment, we could transmit the SSIL signal over 10-km because of the chromatic dispersion effect from the large 3-dB bandwidth of the signal about 0.45 nm. To increase the transmission distance, the bandwidth of the signal should be reduced. Because the reduced bandwidth introduces the lower SNR, however, the alternate SOA for increasing the noise reduction efficiency should be used such as cascaded SOAs [6] or a long length SOA.
CONCLUSIONWe successfully demonstrated that a GS-SOA with a holding light could be used as an optical power booster in optical access network using a SSIL source. With the holding light, the signal distortion in the GS-SOA due to the carrier depletion was suppressed and, as a result, the Q-factor was dramatically improved. For a 2.5-Gb/s SSIL signal transmitted over 10 km of SMF, the highest gain-Q-factor product of 96.3 was obtained by using the proposed booster for P in ϭ Ϫ3 dBm and P hl ϭ Ϫ12 dBm. The corresponding BER was lowered to 6 ϫ 10 Ϫ11 .
ACKNOWLEDGMENTSThis work was partially supported by KOSEF through grant No. R01-2006-000-11088-0 from the Basic Program. 6. S.-J. Kim, J.-H. Han, J.-S. Lee, and C.-S. Park, Suppression of the intensity noise in a 10 Gbit/s spectrum-sliced incoherent light channel using gain-saturated semiconductor optical amplifiers, Electron The recent and rapid development in demand for optical Internet services and data communication has prompted many research groups to study dense wavelength division multiplexing systems. Specially, array-waveguide grating (AWG) fabricated by using polymeric optical waveguides are attracting considerable interest because of their potential applications in optical communications, optical interconnections, and integrated optics [1][2][3][4]. Key issues in the polymeric waveguide materials include a low propagation loss at 1550-nm wavelength, a high thermal stability and small birefringence, easy control of refractive index, large volume, and low cost production facilities. These features make polymeric AWG devices apt for employing planar light wave circuit technology [5,6]. In the past few years, the rising polymeric SU-8 2005(MicroChem, MA), a kind of thick negative resist with high aspect ratio, high sidewall quality, high transparency (above 400 nm), good self-leveling up capability, and dimensional control is playing a key role in microelectro mechanical systems(MEMS) and micro-optic-electromechanical systems [7][8][9]. It is obvious that the advantages of the resist compared with PMMA are a higher sensitivity and chemical stability [10]. Inducting the negative resist for optical waveguide material, it is very significant for optimizing producing process and enhancing optical performances of AWG device [11,12]. In this article, we discuss the optimized structural properties of the polymeric waveguides by the scanning electron microscope (SEM) images, show the design parameters of the mask, fabrication procedures, and optical performances of the polymeric 41 ϫ 41 AWG device, measure the propagation loss of o...