Abstract-Biosensors are commonly produced using an SOI CMOS process and advanced lithography to define nanowires. In this work, a simpler and cheaper junctionless 3-mask process is investigated, which uses thin film technology to avoid the use of SOI wafers, in-situ doping to avoid the need for ion implantation and direct contact to a low doped polysilicon film to eliminate the requirement for heavily doped source/drain contacts. Furthermore, TiN is used to contact the biosensor source/drain because it is a hard, resilient material that allows the biosensor chip to be directly connected to a printed circuit board without wire bonding. pH sensing experiments, combined with device modelling, are used to investigate the effects of contact and series resistance on the biosensor performance, as this is a key issue when contacting directly to low doped silicon. It is shown that in-situ phosphorus doping concentrations in the range 4×10