Top-emitting organic light-emitting devices using surface-modified Ag anode

Chen, Chieh-Wei; Hsieh, Ping‐Yen; Chiang, Huo-Hsien; Lin, Chong; Wu, Hanming; Wu, Chung‐Chih

doi:10.1063/1.1635076

Cited by 220 publications

(78 citation statements)

References 20 publications

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“…The current densities of OLEDs with bare Ag or Cu anode are much lower than those of OLEDs with thiol-SAM Ag or Cu anode. The formers moderately increase with voltage but the latters drastically increase around 2 V. Chen et al reported that Ag 2 O as a hole transport material is more effective for low driving voltage [15]. In this report, the current of OLED with unoxidized Ag anode showed the same behavior as our device's.…”

Section: Resultssupporting

confidence: 75%

Electrical Conduction of Organic Thin Film with Copper/Thiol-based Self-Assembled Monolayer Anode

Mori

Imai

Furuhashi

et al. 2014

J. Photopol. Sci. Technol.

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We have improved lifetime and low driving voltage of the device using an electrode modified by a silane-based fluorinated self-assembled monolayer (FSAM) on ITO (transparent electrode). In the process of fabricating organic light-emitting diodes (OLEDs) devices using Ag or Cu electrode modified by a fluorinated thiol-based SAM, anomalous current saturation phenomena was observed on current-voltage characteristics only when using a thiol-SAM-modified Cu anode. When the performance of the OLED with thiol-SAM-modified Cu or Ag anode were compared with that of the OLED with FSAM-modified ITO, the thiol-SAM-modified Ag anode showed more excellent performance than the FSAM-modified ITO. The OLED with thiol-SAM-modified Cu anode also showed the strange EL efficiency behavior in the saturation current region.

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Section: Resultssupporting

confidence: 75%

Electrical Conduction of Organic Thin Film with Copper/Thiol-based Self-Assembled Monolayer Anode

Mori

Imai

Furuhashi

et al. 2014

J. Photopol. Sci. Technol.

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“…It has also been used as an efficient modification layer of ITO and (p-Si) anode to enhance hole injection [12], [13]. In addition, many high work function metals such as Ag and Au [14], [15] have been studied as the anode materials. However, they are not suitable for the anode as the hole injection is virtually blocked when the metal anodes are used [16]- [18].…”

mentioning

confidence: 99%

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Zhang

Choy²

2008

IEEE Trans. Electron Devices

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CONVENTIONAL bottom emitting organic light-emitting devices (OLEDs) commonly use conductive indium tin oxide (ITO) as anode because of its high conductivity, transparency, and work function. However, the surface of ITO glass is chemically and physically ill defined, which will degrade the performance as the hole-injecting electrode in OLEDs. Over the past years, many methods were used to treat the surface of ITO [1]- [5], such as ultraviolet-ozone cleaning and oxygen plasma exposure, in order to enhance hole injection [1], [2]. These treatments were effective in removing residual surface contaminants and increasing oxygen content at ITO surface, resulting in the increase of work function to minimize interfacial charge injection barriers.Moreover, the incorporation of injection enhancing interlayer at electrode-organic interfaces has been used as one alternative route to control carrier injection [6] In this brief, we use V 2 O 5 coating on transparent thin Au film as a composite hole-injection layer on ITO anode for bottom emitting OLEDs. The characteristics of bottom emitting OLEDs with the composite anodes of ITO-Au-V 2 O 5 are described. A thin oxide layer V 2 O 5 is used to modify the surface of Au for enhancing the hole injection from Au by the increase of work function to 5.3 eV and thus sequentially improves emission efficiency. The effects of V 2 O 5 layer on the enhancement of electrical properties of the bottom emitting OLEDs are discussed. Ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS, respectively) analysis indicate that the higher work function of ITO/Au/V 2 O 5 (5.3 eV) than ITO/Au (5.0 eV) anode is due to Au surface band bending. Thus, the barrier for hole injection from ITO through Au/V 2 O 5 to the hole transport layer (HTL) is decreased. Our results show that the performance of OLEDs with V 2 O 5 layer is greatly improved compared with the case of only Au layer on the ITO. Interestingly, it is also better than the ITO anode modified by V 2 O 5 device.All devices were fabricated on ITO coated glass with a sheet resistance of 10 Ω/ , and thermally deposited LiF/Al was used as cathode. ITO substrate was cleaned and treated by O 2 plasma. The deposition was carried out at a pressure of less than 3 × 10 −4 Pa without any vacuum break. The organics and metal oxide were evaporated at the rate in a range of 0.3-0.4 nm/s. The Au metals were evaporated at the rate of ∼0.1 nm/s prior to the oxide and organic layer deposition. Al metal was evaporated at the rate of 0.3∼0.5 nm/s. The devices have an emissive area of 3.57 mm

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“…For example, at 520 nm which is Alq 3 's characteristic emitting wavelength, the transmittances of the Ce (4 nm)/Au (15 nm) and Ce (11 nm)/Au (15 nm) cathodes are about 54 and 46%, respectively, higher than that of the LiF (0.5 nm)/Al (1 nm)/Ag (20 nm)/TeO 2 (40 nm) cathode of 40% reported in the Ref. [23].…”

Section: Methodsmentioning

confidence: 82%

Organic light emitting diodes with p-Si anodes and semitransparent Ce/Au cathodes

Sun

Guang-zhi

2011

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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The Ce (x nm)/Au (15 nm) stacked layers were used as semitransparent cathodes in the top-emission organic light emitting devices (TOLEDs) fabricated on a p-type silicon anodes and substrate, where x varies from 4 to 16. The consequence of the Ce layer thickness on transmittance and the device performance were studied when the organic layers NPB (60 nm)/ALQ (60 nm) were kept unchanged, where NPB was N, N'-bis-(1-naphthl)-diphenyl-1, 1'-biphenyl-4, 4'-diamine, and AlQ is tris-(8-hydroxyquinoline) aluminum. The cathode of Ce (11 nm)/Au (15 nm) has a transparency of 46%, and the TOLED with it achieves the highest luminescence efficiencies: a current efficiency of 0.91 cd/A at 13.7 V and a peak power efficiency of 0.28 lm/W at 9 V. The turn-on voltage is 3.0 V. The Ce/Au cathode is both chemically and electrically stable.

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Top-emitting organic light-emitting devices using surface-modified Ag anode

Cited by 220 publications

References 20 publications

Electrical Conduction of Organic Thin Film with Copper/Thiol-based Self-Assembled Monolayer Anode

Electrical Conduction of Organic Thin Film with Copper/Thiol-based Self-Assembled Monolayer Anode

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Organic light emitting diodes with p-Si anodes and semitransparent Ce/Au cathodes

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