Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Kusunoki, Kazuhiko; Okada, Nobuhiro; Kamei, Kazuhito; Moriguchi, Koji; Daikoku, Hironori; Kado, Motohisa; Sakamoto, Hidemitsu; Bessho, Takeshi; Ujihara, Toru

doi:10.1016/j.jcrysgro.2014.03.006

Cited by 65 publications

(51 citation statements)

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“…This is well in agreement both with experimental evidences inferring 3C-SiC as the most stable SiC structure in the nuclear stage [37] and with a recent theoretical work [29]. Nevertheless, the predicted energetic hierarchy at T=0K is still not sufficient to understand the competition in stability of SiC polytypes at higher temperature, as probed experimentally [16][17][18][19][20]27]. Thus, the variation of the entropic contributions with temperature for the different polytypes becomes crucial.…”

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confidence: 87%

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Temperature-Dependent Stability of Polytypes and Stacking Faults inSiC: Reconciling Theory and Experiments

et al. 2019

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The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based on ab-initio calculations including van der Waals corrections, a temperature-dependent polytypic diagram consistent with the experimental observations is obtained. Results are easily interpreted based on the influence of the hexagonality on both cohesive energy and entropy. Temperature-dependent stability of stacking faults is also analyzed and found to be in agreement with experimental evidences. Our results suggest that lower temperatures during SiC crystal deposition are advantageous in order to reduce ubiquitous stacking faults in SiC-based power devices.

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confidence: 87%

“…Contrary, experiments have shown that the cubic (3C) structure does grow in preference to all others and only at very high temperatures hexagonal phases, i.e. 4H and 6H polytypes, have been observed to prevail [10,14,[16][17][18][19][20]. Thereby, SiC polytype stability at different temperatures remains unclear.…”

mentioning

confidence: 99%

Temperature-Dependent Stability of Polytypes and Stacking Faults inSiC: Reconciling Theory and Experiments

et al. 2019

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“…Referring to previous studies [14,15], turbulence is selected because its value is greater than the critical Rayleigh number (R ac = 4 × 10 4 ) [16,17]. The Rayleigh number is defined by the following formula:…”

Section: Methodsmentioning

confidence: 99%

Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Liu

Tang

et al. 2019

Crystals

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The growth interface instability of large-size SiC growth in top-seeded solution growth (TSSG) is a bottleneck for industrial production. The authors have previously simulated the growth of 4-inch SiC crystals and found that the interface instability in TSSG was greatly affected by the flow field. According to our simulation of the flow field, we proposed a new stepped structure that greatly improved the interface stability of large-size crystal growth. This stepped structure provides a good reference for the growth of large-sized SiC crystals by TSSG in the future.

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“…Recently, a top-seeded solution growth (TSSG) method, in which a SiC seed is dipped into a solution in a carbon crucible as the carbon source, has been studied as a promising growth technique for obtaining micropipefree wafers with low dislocation densities [3,4]. As the temperature required in the TSSG method is lower than * corresponding author; e-mail: taishi@shinshu-u.ac.jp that used in PVT, a higher quality crystal is produced owing to the dynamic equilibrium at the solid-liquid interface [5].…”

Section: Introductionmentioning

confidence: 99%

Estimation of C Solubility at SiC Saturation from the Reaction of Carbon Crucible with Si-Cr Solvent for Top-Seeded Solution Growth

2019

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The reaction between a carbon crucible and Si-Cr solvent, and the carbon solubility at SiC saturation in Si-Cr solvent were investigated using infrared absorption after combustion, field-emission scanning electron microscopy, and electron probe microanalysis. Si0.6Cr0.4, commonly used for silicon carbide crystal growth, was maintained in a carbon crucible at 1500-1950 • C for several minutes. The amount of carbon dissolved in the solvent was determined. The carbon content initially increased for 5 min, then remained constant until 10th min, and finally increased again with time at high temperature. According to microanalysis, the second increase in carbon content was due to the crystallization of small SiC grains in the solvent after reaching saturation, while the constant carbon content was due to the equilibrium between the SiC interlayer along the crucible wall and the solvent. Assuming the plateau of carbon content closely represented the carbon solubility at each temperature, a pseudo binary phase diagram was created for Si and C. Experimentally obtained constant carbon contents is in good agreement with the carbon solubilities calculated using CALPHAD.

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Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Cited by 65 publications

References 10 publications

Temperature-Dependent Stability of Polytypes and Stacking Faults inSiC: Reconciling Theory and Experiments

Temperature-Dependent Stability of Polytypes and Stacking Faults inSiC: Reconciling Theory and Experiments

Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Estimation of C Solubility at SiC Saturation from the Reaction of Carbon Crucible with Si-Cr Solvent for Top-Seeded Solution Growth

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