1990
DOI: 10.1016/s0065-2539(08)60598-3
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Topography of Solid Surfaces Modified by Fast Ion Bombardment

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Cited by 15 publications
(5 citation statements)
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“…Furthermore, ion bombardment causes surface micro-roughening and the formation of various micro-sized surface features (Figure 9). Cones, pyramids, pits, hillocks, steps, etc., have been observed, and their formation is closely related to the initial surface irregularities, impurities, intrinsic or ion-beam-induced defects and variations in the sputtering yield as a function of the angle of ion beam incidence to the surface [25,26]. Especially large topographic changes occur at high fluencies of ions.…”
Section: Substrate Irregularities Induced By Ion Etchingmentioning
confidence: 99%
“…Furthermore, ion bombardment causes surface micro-roughening and the formation of various micro-sized surface features (Figure 9). Cones, pyramids, pits, hillocks, steps, etc., have been observed, and their formation is closely related to the initial surface irregularities, impurities, intrinsic or ion-beam-induced defects and variations in the sputtering yield as a function of the angle of ion beam incidence to the surface [25,26]. Especially large topographic changes occur at high fluencies of ions.…”
Section: Substrate Irregularities Induced By Ion Etchingmentioning
confidence: 99%
“…The little discrepancy can be explained mainly by the surface roughness -facilitating the ejection of particles -which is not taken into account in the present simulation. In fact, it is well known that under ion beam bombardment leading to sputtering, the scanning electron micrographs of the irradiated samples revealed various modifications in the surfaces such as craters of typical size 10 µm with intertwined ripples [19,20]. Furthermore, all the distribution curves exhibited an over-cosine tendency, with a fit parameter n = 1.6 for aluminum ( Fig.…”
Section: Mathematical Formalismmentioning
confidence: 93%
“…According to first-order erosion theory, the dependence of sputtering yield on angle of incidence of the ion beam plays a major role in formation of sputtered cones, as suggested by different authors (Carter et al 1983;Ghose and Karmohapatro 1990). If 0 be the angle between the direction of the incident ion beam and the normal to the surface, then the sputtering yield Y(O) follows a sec0 dependence when 0 is low.…”
Section: Possible Mechanism Of Cone Formation On the Samplementioning
confidence: 99%
“…This variation of Y(O) with 0 is shown in figure 2. A number of authors have discussed the mechanism of cone formation as summarized by Ghose and Karmohapatro (1990) in their recent review of the subject. The following mechanism for the nucleation of cones can be regarded as responsible in our present investigation.…”
Section: Possible Mechanism Of Cone Formation On the Samplementioning
confidence: 99%