Topological disorder and conductance fluctuations in thin films

Scaling Law of Resistance Fluctuations in Stationary Random Resistor Networks

“…The disordered regime is found to exhibit a scaling relation for the relative variance of resistance fluctuations ͗dR 2 ͗͘͞R͘ 2 ϳ ͑p c 2 p͒ 2k with k 3.1. These results confirm that noise is much more sensitive than resistance in probing the dynamical defectiveness of a sample [5][6][7][8][9][10][11][12][13]15,[21][22][23][24][25][26]. The stationary RRN represents an attractive physical model to investigate excess noise associated with resistance fluctuations.…”

“…In particular, the two competing mechanisms of breaking and recovery we have introduced can have several physical mechanisms as counterpart. Some illustrative examples are the following: (i) the productions of voids and their healing due to the accumulation of mechanical stress in electromigration phenomena [18][19][20]; (ii) generation-recombination models of carriers between bands and/or from band to localized states in semiconductors [15,[21][22][23][24]; (iii) carrier-number fluctuations produced by tunneling or hopping conduction in composite materials [13,14]; (iv) charge trapping and detrapping involved in soft dielectric breakdown of ultrathin dielectrics [18,20,25]. Here we limit our study to the intrinsic property of the RRN.…”

Resistance Noise Near to Electrical Breakdown: Steady State of Random Networks as a Function of the Bias

“…It is well known that the application of a finite stress (electrical or mechanical) to a disordered material generally gives a nonlinear response, which ultimately leads to an irreversible breakdown (catastrophic behavior) in the high stress limit 1-4 . Such breakdown phenomena have been successfully studied by using percolation theories 1-3 , 6-9 , 13-25 , 30 , [36][37][38][39][40][41][42] . In particular, by focusing on electrical breakdown, a large attention has been devoted to the determination, by both theory 1-3 , 6,7,20 , 36-42 and experiments 1-3 , 13-18 of the critical exponents describing the resistance and the variance of resistance fluctuations in terms of the conducting particle (or defect) concentration 36,37 .…”

“…In particular, by focusing on electrical breakdown, a large attention has been devoted to the determination, by both theory 1-3 , 6,7,20 , 36-42 and experiments 1-3 , 13-18 of the critical exponents describing the resistance and the variance of resistance fluctuations in terms of the conducting particle (or defect) concentration 36,37 . In fact, it is well known that the study of the resistance fluctuations is a fundamental tool to extract information about the system stability 1-4 , 27-29 , [39][40][41][42][43][44][45][46][47][48] . In spite of the wide literature on the subject few attempts have been made so far 21,22 to describe the behavior of a disordered medium over the full range of the applied stress, i.e.…”

1/f Noise in doped and undoped amorphous silicon

“…[17], lozenge from Ref. [16]. The values have been adjusted to account for dierences in sample volume.…”