2013
DOI: 10.1103/physrevb.88.045312
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Topological insulator Bi2Se3(111) surface doped with transition metals: Anab initioinvestigation

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Cited by 63 publications
(77 citation statements)
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“…Our calculations of the MAE reveal the out-of-plane magnetization direction for both cases (see Fig. 3), which is in good agreement with results of recent first-principles calculations [10]. This opens the band gap, which was estimated in our calculations at 5% chromium concentration to be 4.5 meV and 1.2 meV for the substitutional and interstitial Cr impurities, respectively.…”
Section: Magnetic Impurity At the Bi 2 Se 3 (0001) Surfacesupporting
confidence: 91%
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“…Our calculations of the MAE reveal the out-of-plane magnetization direction for both cases (see Fig. 3), which is in good agreement with results of recent first-principles calculations [10]. This opens the band gap, which was estimated in our calculations at 5% chromium concentration to be 4.5 meV and 1.2 meV for the substitutional and interstitial Cr impurities, respectively.…”
Section: Magnetic Impurity At the Bi 2 Se 3 (0001) Surfacesupporting
confidence: 91%
“…A further interesting situation is that of periodically ordered magnetic impurities at the surface of a TI [10]. In this case the translation symmetry is still preserved.…”
Section: Introductionmentioning
confidence: 99%
“…4(a), for the electronic states parallel to the Γ-M direction, we find (i) positive (negative) values of S n,x (k) for the occupied (empty) states, while (ii) S n,y (k) = S n,z (k) = 0; whereas for k parallel to the Γ-K direction, we find (iii) negative (positive) values of S n,y (k) for the occupied (empty) states, (iv) S n,x (k) = 0, and (v) S n,z (k) values are negligible around the Γ-point. Such a picture of S n,α (k) , for the TSSs lying at the (py-Bi 2 Se 3 ) 1 /(Bi 2 Se 3 ) 5 interface, is practically the same as that obtained for the TSSs on the Bi 2 Se 3 (111) surface 21,23 . We now propose a mechanism to gain control over the topologically protected metallic states in (pyBi 2 Se 3 ) m /(Bi 2 Se 3 ) n .…”
supporting
confidence: 75%
“…Although Cr is one of the most used dopant in the investigation between the surface states of TIs in general, and Bi2Se3 in particular [16,17,25,27,[30][31][32][33][34][35] which suggests that Bi-site substitution is energetically favorable for Cr [36]. However, the ARPES results do not show the broadening of the surface states or opening of a surface state energy gap as is the case for Cr bulk doping.…”
mentioning
confidence: 99%