Topological phase stability and transformation of bismuthene

Wang, Xiaoxiong; Xu, Caizhi; Hu, Huanzhi; Wang, Peng; Bian, Guang; Tan, Weishi; Brown, Simon; Chiang, T.‐C.

doi:10.1209/0295-5075/119/27002

Cited by 23 publications

(17 citation statements)

References 41 publications

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“…Group-V elemental and alloy crystals have attracted significant attention since the first fabrication of blackphosphorous-based transistors [7] and the discovery that Bi 1−x Sb x is a three-dimensional (3D) topological insulator [47,48]. Because of the strong spin-orbit coupling in Bi, many of its known allotropes are topologically nontrivial: α-Bi [49,50], β-Bi [51], and even bulk Bi [52] have all been reported to possess nontrivial topology, and most recently exotic hinge states have been reported in Bi nanowires [53]. An area of active investigation is whether the topological properties survive in the low-dimensional forms of these materials [45,50].…”

Section: B Topological Group-v Materialsmentioning

confidence: 99%

“…Because of the strong spin-orbit coupling in Bi, many of its known allotropes are topologically nontrivial: α-Bi [49,50], β-Bi [51], and even bulk Bi [52] have all been reported to possess nontrivial topology, and most recently exotic hinge states have been reported in Bi nanowires [53]. An area of active investigation is whether the topological properties survive in the low-dimensional forms of these materials [45,50]. In fact the 2D forms of these materials are interesting because of the crystalline symmetries that are adopted.…”

Section: B Topological Group-v Materialsmentioning

confidence: 99%

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Moiré patterns in van der Waals heterostructures

et al. 2019

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Using scanning tunneling microscopy, we report the observation of moiré patterns (MPs) on van der Waals heterostructures comprised of various 2D allotropes of bismuth and antimony grown on highly ordered pyrolytic graphite and MoS 2 . The spatial periods of the MPs range from λ ∼ 1 to ∼10 nm. For all the reported cases (α-bismuthene, α-antimonene, β-antimonene, and monolayer bismuthene), we model the observations using a simple superposition model (SSM). Where possible, the results obtained from the SSM are compared to analytical prediction. MPs emerging from mixed symmetry stacking (hexagonal on rectangular) are explained without requiring commensuration of the layers.

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Section: B Topological Group-v Materialsmentioning

confidence: 99%

Section: B Topological Group-v Materialsmentioning

confidence: 99%

Moiré patterns in van der Waals heterostructures

et al. 2019

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“…calculations predicted that the bandgap is changed and closed by the tensile strain. [12][13][14] In the previous experiment, Bi(111) thin-film formed on a Si(111) and Bi 2 Te 3 substrate shows the lattice constant a = 4.54 Å 4) and a = 4.38 Å 8) respectively. It is reported that topological electronic states of Bi(111) thin-films are changed by the epitaxial strain of these different substrate.…”

mentioning

confidence: 94%

“…32) However, the system always has Z 2 = 1; therefore, strained single bilayer Bi(111) preserves the Z 2 topological insulator phase. 13,14) Figure 2 We investigated the electric-field-induced Z 2 topological phase transition. Figure 3(a) shows a topological phase diagram of strained systems under electric fields.…”

mentioning

confidence: 99%

Electric-field-induced Z ₂ topological phase transition in strained single bilayer Bi(111)

Sawahata

Yamaguchi

Ishii

2019

Appl. Phys. Express

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For controlling the critical electric fields of the topological phase transition in single bilayer Bi(111), we investigated topological phases in a strained system through first-principles calculations. We found a quadratic band touching semimetallic state at tensile strain = 0.5%. Around this strain, the topological phase can be switched to a trivial insulator by an infinitesimal electric field. The positions at which Dirac cones appear in the electric-field-induced topological phase transition changed for the strain > 0.5% and < 0.5%. Our results indicate that this topological phase transition could be applied to novel spintronic devices.The electric-field-driven Z 2 topological phase transition plays an important role in the application of topological materials 1, 2) to novel devices. The Z 2 topological phase has dissipation-free spin currents at the edge of the system, and its special edge state is robust against nonmagnetic impurities. If the topological phases could be switched by electric fields, novel spintronic devices using edge spin currents could be realized. 3) A Bi(111) thin-film is a candidate material for fabricating an electric-field-switched Z 2 topological phase device. It is reported that Bi(111) thin-film can be formed on Si(111). 4) Bi(111) thin-film and single bilayer Bi(111) are an important material in two-dimensional topological insulators so that it has been extensively studied theoretically and experimentally. [5][6][7][8][9] We previously predicted that single bilayer Bi(111) is a topological insulator under electric field of E < 2.1 V/Å and a trivial insulator under E > 2.1 V/Å by computing Z 2 invariants 10) and edge states. 11) The bandgap of single bilayer Bi(111) decreases from 0.32 eV to 0 eV when the applied electric field reaches E = 2.1 V/Å. To realize the device applications using single bilayer Bi(111), this critical electric field E = 2.1 V/Å is too large so that we should reduce the critical electric field by tuning the bandgap.The epitaxial strain can tune the bandgap of single bilayer Bi(111). Density functional *

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“…The electronic properties of single‐layer b‐bismuthene change by applying electric field and strain significantly . Unstrained single‐layer b‐bismuthene is a semiconductor while strained single‐layer b‐bismuthene is metal in strains more compress than −8% and has a transition point at strain = 5% . Following the exploration of group V monolayers' properties, it is attractive to investigate the electronic and optical behavior of single‐layer b‐bismuthene in its semiconducting regions.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Buckled Bismuthene

Shiraz

2019

Physica Status Solidi (b)

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The optical properties of single‐layer buckled bismuthene (b‐bismuthene) are investigated by performing density functional theory calculations. The energy gap of b‐bismuthene at Γ point is minimum at strain near 5%, the gap size increases for strains more and less than 5%. The imaginary and real part of dielectric functions, absorption, reflection, and electron energy loss function are investigated in strains less and more than 5%. According to the simulation results, the optical properties of b‐bismuthene do not change significantly in different strains. The absorption and reflection are high in the infrared (IR) range, which make b‐bismuthene an IR reducer.

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Topological phase stability and transformation of bismuthene

Cited by 23 publications

References 41 publications

Moiré patterns in van der Waals heterostructures

Moiré patterns in van der Waals heterostructures

Electric-field-induced Z ₂ topological phase transition in strained single bilayer Bi(111)

Optical Properties of Buckled Bismuthene

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Topological phase stability and transformation of bismuthene

Cited by 23 publications

References 41 publications

Moiré patterns in van der Waals heterostructures

Moiré patterns in van der Waals heterostructures

Electric-field-induced Z 2 topological phase transition in strained single bilayer Bi(111)

Optical Properties of Buckled Bismuthene

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Electric-field-induced Z ₂ topological phase transition in strained single bilayer Bi(111)