Topological Surface Transport Properties of Single-Crystalline SnTe Nanowire

Safdar, Muhammad; Wang, Qisheng; Mirza, Misbah; Wang, Zhenxing; Xu, Kai; He, Jun

doi:10.1021/nl402841x

Cited by 124 publications

(132 citation statements)

References 38 publications

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“…CVD and solvothermal synthesis play more significant roles in preparing 1D TI materials such as nanowires, nanoribbons, and nanotubes. 72,73,[75][76][77] Thanks to tremendous progress in recent years, high quality of TI nanostructures with considerable surface contributions is realized and verified by various measurements. Metallic surface band structures in angle-resolved photoemission spectroscopy (ARPES), Landau quantizations, Aharonov-Bohm (AB) oscillation and Shubnikov-de Haas oscillations have been observed in TI thin films, nanoribbons or nanowires, 23, 37-39, 42, 78-80 and hybridization of surface states has also been observed in ultra-thin TI films.…”

Section: Experimental Trialsmentioning

confidence: 86%

“…CVD and solvothermal synthesis can produce TI nanoplates in high yield with relatively high quality and some degree of controllability at the same time. 42,43,[69][70][71][72][73][74][75][76][77] It is to be noted that CVD has an advantage over solvothermal synthesis in sample quality for its relative clean reaction system. CVD and solvothermal synthesis play more significant roles in preparing 1D TI materials such as nanowires, nanoribbons, and nanotubes.…”

Section: Experimental Trialsmentioning

confidence: 99%

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Topological insulators for thermoelectrics

2017

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Topological insulators demonstrate tremendous potential in fields of electronics and magnetism for their unique boundary states that are topologically protected against backscattering at non-magnetic impurities and defects. Intriguingly, most topological insulators are also excellent thermoelectric materials, since topological insulator and thermoelectric compounds share similar material features, such as heavy elements and narrow band gaps. While the influence of topological insulator boundary states has long been neglected in early thermoelectric research, recently this neglected issue has attracted intensive research efforts. A lot of theoretical and experimental investigations have emerged to explore the contribution of topological insulator boundary states to thermoelectricity. Here, we will review the most updated theoretical and experimental progresses, trying to offer a comprehensive understanding on the relation between thermoelectric properties and topological nature. Special emphasis will be laid on the potential of topological states for improving thermoelectric properties, to pave a new way of realizing high-performance thermoelectric devices.

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Section: Experimental Trialsmentioning

confidence: 86%

Section: Experimental Trialsmentioning

confidence: 99%

Topological insulators for thermoelectrics

2017

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“…Overall, a thin flake-type morphology having a facetted-edge was observed throughout in the microstructure. Figure 2 zone axis with the denotation of 011 1 and 21 10 crystallographic planes of rhombohedral structure.…”

Section: Methodsmentioning

confidence: 99%

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Bhattacharyya¹,

Sharma

Awana

et al. 2017

J. Phys.: Condens. Matter

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Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanoribbons. Here we report robust approach of Bi 2 Se 3 nanowire formation from deposited flakes using ion beam milling method. The fabricated Bi 2 Se 3 nanowire devices have been employed to investigate the robustness of topological surface state (TSS) to gallium ion doping and any deformation in the material due to fabrication tools. We report the quantum oscillations in magnetoresistance curves under the parallel magnetic field. The resistance versus magnetic field curves have been studied and compared with Aharonov-Bohm (AB) interference effects which further demonstrate the transport through TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations and can be exploited further in studying the exotic electronic properties associated with TI based nanodevices.

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“…[26][27][28][29][30] In particular, SnTe nanoplates with both {100} and {111} surfaces were successfully grown using Au catalyst, but without the catalyst, only nanoblocks of SnTe were reported to grow. 30 Here, we report the growth of Sn1-xInxTe nanoplates with {100} and {111} Figure 1a.…”

Section: Introductionmentioning

confidence: 99%

Superconducting Sn_1–xIn_xTe Nanoplates

Sasaki

Ando

2015

Crystal Growth & Design

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ABSTRACT:Recently, the search for Majorana fermions has become one of the most prominent subjects in condensed matter physics. This search involves explorations of new materials and hence offers interesting opportunities for chemistry. Theoretically, Majorana fermions may reside in various types of topological superconductor materials, and superconducting Sn1-xInxTe, which is a doped topological crystalline insulator, is one of the promising candidates to harbor Majorana fermions. Here, we report the first successful growth of superconducting Sn1-xInxTe nanoplates on Si substrates by a simple vapor transport method without employing any catalyst. We observed robust superconducting transitions in those nanoplates after device fabrication and found that the relation between the critical temperature and the carrier density is consistent with that of bulk single crystals, suggesting that the superconducting properties of the nanoplate devices are essentially the same as those of bulk crystals. With the help of nanofabrication, those nanoplates would prove useful for elucidating the potentially topological nature of superconductivity in Sn1-xInxTe to harbor Majorana fermions and thereby contribute to the future quantum technologies.2

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Topological Surface Transport Properties of Single-Crystalline SnTe Nanowire

Cited by 124 publications

References 38 publications

Topological insulators for thermoelectrics

Topological insulators for thermoelectrics

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Superconducting Sn_1–xIn_xTe Nanoplates

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Topological Surface Transport Properties of Single-Crystalline SnTe Nanowire

Cited by 124 publications

References 38 publications

Topological insulators for thermoelectrics

Topological insulators for thermoelectrics

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

Superconducting Sn1–xInxTe Nanoplates

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Product

Resources

About

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Superconducting Sn_1–xIn_xTe Nanoplates