Total Dose Effects in CMOS Trench Isolation Regions

Johnston, A.H.; Swimm, Randall T.; Allen, Gregory R.; Miyahira, T.F.

doi:10.1109/tns.2009.2019273

Cited by 45 publications

(12 citation statements)

References 15 publications

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“…Similar results were obtained using field-oxide field-effect transistors (FOXFETs) under similar test conditions [33]. The thin oxides near the trench corner and the widespread use of corner rounding in the industry reduce the importance of charge trapping near the corner region [34]. The overall response of bulk FinFETs is therefore similar to planar bulk MOSFETs [33], [34].…”

Section: A Offstate Leakage Currentsupporting

confidence: 60%

“…The thin oxides near the trench corner and the widespread use of corner rounding in the industry reduce the importance of charge trapping near the corner region [34]. The overall response of bulk FinFETs is therefore similar to planar bulk MOSFETs [33], [34]. In contrast, for SOI FinFETs, charge trapping in the buried oxide (BOX) can affect the device degradation through a direct coupling effect between the front and back interfaces [12]- [15].…”

Section: A Offstate Leakage Currentmentioning

confidence: 99%

“…The wider pitch leads to a greater effective thickness of the isolation oxide, which increases the amount of trapped charge in the STI [33], [34]. It is well known that the total oxide trapped charge is proportional to thickness.…”

Section: Fin-pitch Variationsmentioning

confidence: 99%

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Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Chatterjee

Zhang

Bhuva

et al. 2014

IEEE Trans. Nucl. Sci.

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The total ionizing dose (TID) response of bulk Fin-FETs is investigated for various geometry variations, such as fin width, channel length, and fin pitch. The buildup of oxide-trapped charge in the shallow trench isolation turns on a parasitic transistor, leading to increased leakage current (higher .) The TID-induced degradation increases with decreasing fin width. Transistors with longer channels degrade less than those with shorter channels. Transistors with large fin pitch degrade more, compared to those with narrow fin pitch. TCAD simulations are used to analyze the buildup of trapped charge in the trench isolation oxide and its impact on the increase in leakage current. The strong influence of charge in the STI in narrow-fin transistors induces a parasitic leakage current path between the source and the drain, while in wide-fin devices, for the same amount of trapped charge in the isolation oxide, the subsurface leakage path is less effective.Index Terms-Buried oxide, charge trapping, FinFET, geometry dependence, hole traps, isolation oxide, subthreshold slope degradation, threshold voltage shift, total ionizing dose, worst-case bias.

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Section: A Offstate Leakage Currentsupporting

confidence: 60%

Section: A Offstate Leakage Currentmentioning

confidence: 99%

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Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Chatterjee

Zhang

Bhuva

et al. 2014

IEEE Trans. Nucl. Sci.

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“…Charge trapping under low electric field is dominated by carrier diffusion and by drift under higher electric field [7]. Low electric field is encountered when the device is unbiased, or under situations of electric field collapse due to space charge effects [11].…”

Section: Trapping Model Parametrizationmentioning

confidence: 99%

“…Using this method, unrealistic results have been reported such as in cases where the electric field produces non-uniform distribution of charge [6]. Much work on 2D analytical modeling of TID in shallow trench isolation regions of MOSFETs has been performed previously [7,8]. However, only a 3D model could accurately describe the effects of the charges gathering in the various locations in the field oxides, inducing leakage paths in the device.…”

Section: Introductionmentioning

confidence: 99%

A systematic method for simulating total ionizing dose effects using the finite elements method

2017

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Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO 2 capacitors irradiated at total doses of 11.6 kRad (SiO 2 ) and 58 kRad (SiO 2 ). Driftdiffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.

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